Racial and gender differences in the relationship between sarcopenia and bone mineral density among older adults
Ning, H.-T., Du, Y., Zhao, L.-J., Tian, Q., Feng, H., Deng, H.-W.
Published in Osteoporosis international (01.05.2021)
Published in Osteoporosis international (01.05.2021)
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Journal Article
A room temperature 0.1 μm CMOS on SOI
SHAHIDI, G. G, ANDERSON, C. A, NING, T. H, POLCARI, M. R, WARNOCK, J. D, CHAPPELL, B. A, CHAPPELL, T. I, COMFORT, J. H, DAVARI, B, DENNARD, R. H, FRANCH, R. L, MCFARLAND, P. A, NEELY, J. S
Published in IEEE transactions on electron devices (01.12.1994)
Published in IEEE transactions on electron devices (01.12.1994)
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Journal Article
SOI lateral bipolar transistor with drive current >3mA/μm
Cai, J., Ning, T. H., D'Emic, C., Yau, J.-B, Chan, K. K., Yoon, J., Jenkins, K. A., Muralidhar, R., Park, D.-G
Published in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2013)
Published in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2013)
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Conference Proceeding
Hot-electron-induced instability in 0.5- mu m p-channel MOSFETs patterned using synchrotron X-ray lithography
Hsu, C.C.-H., Wang, L.K., Wordeman, M.R., Ning, T.H.
Published in IEEE electron device letters (01.07.1989)
Published in IEEE electron device letters (01.07.1989)
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Journal Article
High-performance devices for a 0.15- mu m CMOS technology
Shahidi, G.G., Warnock, J., Fischer, S., McFarland, P.A., Acovic, A., Subbanna, S., Ganin, E., Crabbe, E., Comfort, J., Sun, J.Y.-C., Ning, T.H., Davari, B.
Published in IEEE electron device letters (01.10.1993)
Published in IEEE electron device letters (01.10.1993)
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Journal Article
Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI
Tianbing Chen, Sutton, A.K., Bellini, M., Haugerud, B.M., Comeau, J.P., Qingqing Liang, Cressler, J.D., Jin Cai, Ning, T.H., Marshall, P.W., Marshall, C.J.
Published in IEEE transactions on nuclear science (01.12.2005)
Published in IEEE transactions on nuclear science (01.12.2005)
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Journal Article
A submicrometer high-performance bipolar technology
Chen, T.-C., Toh, K.Y., Cressler, J.D., Warnock, J., Lu, P.-F., Tang, D.D., Li, G.P., Chuang, C.-T., Ning, T.H.
Published in IEEE electron device letters (01.08.1989)
Published in IEEE electron device letters (01.08.1989)
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Journal Article
On the narrow-emitter effect of advanced shallow-profile bipolar transistors
Li, G.P., Chuang, C.T., Chen, T.-C., Ning, T.H.
Published in IEEE transactions on electron devices (01.11.1988)
Published in IEEE transactions on electron devices (01.11.1988)
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Journal Article
An advanced high-performance trench-isolated self-aligned bipolar technology
Li, G.P., Ning, T.H., Chuang, C.T., Ketchen, M.B., Tang, D.D.-L., Mauer, J.
Published in IEEE transactions on electron devices (01.11.1987)
Published in IEEE transactions on electron devices (01.11.1987)
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Journal Article
Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors
Chen, T.C., Ganin, E., Stork, H., Meyerson, B., Cressler, J.D., Warnock, J., Harame, D., Patton, G., Li, G.P., Chuang, C.T., Ning, T.H.
Published in IEEE transactions on electron devices (01.04.1991)
Published in IEEE transactions on electron devices (01.04.1991)
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Journal Article
Design considerations of high-performance narrow-emitter bipolar transistors
Tang, D.D., Tze-Chiang Chen, Ching-Te Chuang, Li, G.P., Stork, J.M.C., Ketchen, M.B., Hackbarth, E., Ning, T.H.
Published in IEEE electron device letters (01.04.1987)
Published in IEEE electron device letters (01.04.1987)
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Journal Article
Sub-300-ps CBL circuits
Widemann, S.K., Chen, T.-C., Chuang, C.-T., Heuber, K., Wendel, D.F., Warnock, J., Li, G.P., Chin, K., Ning, T.H.
Published in IEEE electron device letters (01.11.1989)
Published in IEEE electron device letters (01.11.1989)
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Journal Article