SIMS and AES investigations of contamination effects by RIE of PIQ layers
Rangelow, I.W., Maβeli, K., Niewöhner, L., Kassing, R., Pilz, W.
Published in Microelectronic engineering (01.12.1985)
Published in Microelectronic engineering (01.12.1985)
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Journal Article
Comparison of Self-Aligned Silicide Technologies for Shallow CoSi2-Contacts in VLSI-Devices
Schaffer, C., Depta, D., Niewohner, L.
Published in ESSDERC '92: 22nd European Solid State Device Research conference (01.09.1992)
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Published in ESSDERC '92: 22nd European Solid State Device Research conference (01.09.1992)
Conference Proceeding
Comparison of the properties of TiSi2 films obtained by silicon and titanium co-sputtering and by composite target sputtering
KOSTER, H, MEISER, S, NIEWOHNER, L, LOMBAERT, I, MANAUD, J. P, DANTO, Y
Published in Thin solid films (01.03.1989)
Published in Thin solid films (01.03.1989)
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Journal Article
Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems
Ma eli, K., Burbach, J., Kassing, R., Kulisch, W., Niew hner, L.
Published in Mikrochimica acta (1966) (01.01.1987)
Published in Mikrochimica acta (1966) (01.01.1987)
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Journal Article
Low resistance epitaxial CoSi/sub 2/-contacts for VLSI circuits
Adamski, C., Uffmann, D., Meiser, S., Niewohner, L., Schaffer, C.
Published in Seventh International IEEE Conference on VLSI Multilevel Interconnection (1990)
Published in Seventh International IEEE Conference on VLSI Multilevel Interconnection (1990)
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Conference Proceeding