Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection
Malherbe, Victor, Nier, Olivier, Moindjie, Soilihi, Roche, Philippe, Roy, Francois, Tournier, Arnaud
Published in IEEE transactions on nuclear science (01.08.2024)
Published in IEEE transactions on nuclear science (01.08.2024)
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Journal Article
Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons
Malherbe, Victor, Roy, Francois, Nier, Olivier, Dalleau, Thomas, De Paoli, Serge, Roche, Philippe, Autran, Jean-Luc, Dentan, Martin, Lu, Guo-Neng
Published in IEEE transactions on nuclear science (01.03.2022)
Published in IEEE transactions on nuclear science (01.03.2022)
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Journal Article
Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition
Antonsanti, Aubin, Goiffon, Vincent, Roy, Francois, Le Roch, Alexandre, Ryder, Landen D., Malherbe, Victor, Roche, Philippe, Nier, Olivier, Virmontois, Cedric, Lauenstein, Jean-Marie
Published in IEEE transactions on nuclear science (01.08.2023)
Published in IEEE transactions on nuclear science (01.08.2023)
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Journal Article
Conference Proceeding
Quantum Modeling of the Carrier Mobility in FDSOI Devices
Viet-Hung Nguyen, Niquet, Yann-Michel, Triozon, Francois, Duchemin, Ivan, Nier, Olivier, Rideau, Denis
Published in IEEE transactions on electron devices (01.09.2014)
Published in IEEE transactions on electron devices (01.09.2014)
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Journal Article
Piezoresistivity in unstrained and strained SOI MOSFETs
Berthelon, R., Casse, M., Rideau, D., Nier, O., Andrieu, F., Vincent, E., Reimbold, G.
Published in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2014)
Published in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2014)
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Conference Proceeding
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility
Nier, O., Rideau, D., Niquet, Y. M., Monsieur, F., Nguyen, V. H., Triozon, F., Cros, A., Clerc, R., Barbé, J. C., Palestri, P., Esseni, D., Duchemin, I., Smith, L., Silvestri, L., Nallet, F., Tavernier, C., Jaouen, H., Selmi, L.
Published in Journal of computational electronics (01.12.2013)
Published in Journal of computational electronics (01.12.2013)
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Journal Article
Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices
Nier, O., Rideau, D., Cros, A., Monsieur, F., Ghibaudo, G., Clerc, R., Barbé, J. C., Tavernier, C., Jaouen, H.
Published in 2014 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2014)
Published in 2014 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2014)
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Conference Proceeding
SAFETY SYSTEM FOR UNMANNED FLYING OBJECT
BORDES, Olivier, BONAVITACOLA, Gilles, GOUISSET, Nils, NIER, Olivier, BATIER, Christophe, GRANDJEAN, Philippe, DAUM, Laurent
Year of Publication 27.07.2022
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Year of Publication 27.07.2022
Patent
SAFETY SYSTEM FOR UNMANNED FLYING OBJECT
BORDES, Olivier, BONAVITACOLA, Gilles, GOUISSET, Nils, NIER, Olivier, BATIER, Christophe, GRANDJEAN, Philippe, DAUM, Laurent
Year of Publication 17.06.2020
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Year of Publication 17.06.2020
Patent
Method of forming stressed semiconductor layer
Rideau Denis, Morin Pierre, Josse Emmanuel, Nier Olivier, Baylac Elise
Year of Publication 10.01.2017
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Year of Publication 10.01.2017
Patent
METHOD OF FORMING STRESSED SEMICONDUCTOR LAYER
NIER OLIVIER, BAYLAC ELISE, RIDEAU DENIS, JOSSE EMMANUEL, MORIN PIERRE
Year of Publication 30.04.2015
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Year of Publication 30.04.2015
Patent