New Design Optimized and IC Area Efficient Rules for the Prevention of Plasma Processing Induced Damage on CMOS Circuit Reliability
Martin, Andreas, Schuler, Bernd, Ankele, Benno, Nielen, Heiko
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
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Conference Proceeding
Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation
Martin, Andreas, Berger, Johannes, Kamp, Angelika, Nielen, Heiko
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
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Conference Proceeding
Anomaly of NBTI data for PMOS transistors degraded by plasma processing induced charging damage (PID)
Martin, Andreas, Valdman, Lukas, Stafford, Benjamin Hamilton, Nielen, Heiko
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
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Conference Proceeding
Understanding and modeling AC BTI
Reisinger, Hans, Grasser, Tibor, Ermisch, Karsten, Nielen, Heiko, Gustin, Wolfgang, Schlunder, Christian
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Drift compensating effect during hot-carrier degradation of 130nm technology dual gate oxide P-channel transistors
Rott, Gunnar Andreas, Nielen, Heiko, Reisinger, Hans, Gustin, Wolfgang, Tyaginov, Stanislav, Grassersstrae, Tibor
Published in 2013 IEEE International Integrated Reliability Workshop Final Report (01.10.2013)
Published in 2013 IEEE International Integrated Reliability Workshop Final Report (01.10.2013)
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Conference Proceeding
Plasma induced charging damage causing MOS device reliability lifetime degradation originating from well charging of a technology with deep trench isolation
Martin, Andreas, Berger, Johannes, Kamp, Angelika, Valdman, Lukas, Lehner, Anja, Mykytenko, Sergii, Nielen, Heiko
Published in IEEE transactions on device and materials reliability (01.09.2023)
Published in IEEE transactions on device and materials reliability (01.09.2023)
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