Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer
Li, Shenzhong, Zhao, Tong, Wu, Defan, Liang, Xingbo, Chen, Hao, Nie, Qunlin, Tian, Daxi, Ma, Xiangyang, Yang, Deren
Published in Journal of applied physics (21.06.2024)
Published in Journal of applied physics (21.06.2024)
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