Demonstration of gallium oxide nano-pillar field emitter arrays
Kim, Taeyoung, Joishi, Chandan, Xia, Zhanbo, Kalarickal, Nidhin Kurian, Selcu, Camelia, Back, Tyson, Ludwick, Jonathan, Rajan, Siddharth
Published in AIP advances (01.07.2023)
Published in AIP advances (01.07.2023)
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Journal Article
Design of Transistors Using High-Permittivity Materials
Xia, Zhanbo, Wang, Caiyu, Kalarickal, Nidhin Kurian, Stemmer, Susanne, Rajan, Siddharth
Published in IEEE transactions on electron devices (01.02.2019)
Published in IEEE transactions on electron devices (01.02.2019)
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Journal Article
Demonstration of MOCVD based in situ etching of β-Ga2O3 using TEGa
Katta, Abishek, Alema, Fikadu, Brand, William, Gilankar, Advait, Osinsky, Andrei, Kalarickal, Nidhin Kurian
Published in Journal of applied physics (21.02.2024)
Published in Journal of applied physics (21.02.2024)
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Journal Article
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
Kalarickal, Nidhin Kurian, Feng, Zixuan, Anhar Uddin Bhuiyan, A. F. M., Xia, Zhanbo, Moore, Wyatt, McGlone, Joe F., Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth
Published in IEEE transactions on electron devices (01.01.2021)
Published in IEEE transactions on electron devices (01.01.2021)
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Journal Article
High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors
Cheng, Junao, Wang, Caiyu, Freeze, Christopher, Shoron, Omor, Combs, Nick, Yang, Hao, Kalarickal, Nidhin Kurian, Xia, Zhanbo, Stemmer, Susanne, Rajan, Siddharth, Lu, Wu
Published in IEEE electron device letters (01.04.2020)
Published in IEEE electron device letters (01.04.2020)
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Journal Article
Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown
Gilankar, Advait, Islam, Ahmad Ehteshamul, McCartney, Martha R., Katta, Abishek, Das, Nabasindhu, Smith, David J., Kalarickal, Nidhin Kurian
Published in Applied physics express (01.04.2024)
Published in Applied physics express (01.04.2024)
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Journal Article
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
Kalarickal, Nidhin Kurian, Xia, Zhanbo, Huang, Hsien-Lien, Moore, Wyatt, Liu, Yumo, Brenner, Mark, Hwang, Jinwoo, Rajan, Siddharth
Published in IEEE electron device letters (01.06.2021)
Published in IEEE electron device letters (01.06.2021)
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Journal Article
High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe F., Liu, Yumo, Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth
Published in Journal of applied physics (07.06.2020)
Published in Journal of applied physics (07.06.2020)
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Journal Article
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1−x)2O3 films
Johnson, Jared M., Huang, Hsien-Lien, Wang, Mengen, Mu, Sai, Varley, Joel B., Uddin Bhuiyan, A F M Anhar, Feng, Zixuan, Kalarickal, Nidhin Kurian, Rajan, Siddharth, Zhao, Hongping, Van de Walle, Chris G., Hwang, Jinwoo
Published in APL materials (01.05.2021)
Published in APL materials (01.05.2021)
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Journal Article
Point Defects and Alloy Incorporation in Ultrawide Bandgap β-(AlxGa1-x)2O3 Films
Huang, Hsien-Lien, Johnson, Jared, Chae, Chris, Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Kalarickal, Nidhin Kurian, Rajan, Siddharth, Zhao, Hongping, Hwang, Jinwoo
Published in Microscopy and microanalysis (01.08.2021)
Published in Microscopy and microanalysis (01.08.2021)
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Journal Article
In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium
Das, Nabasindhu, Fikadu Alema, Brand, William, Katta, Abishek, Gilankar, Advait, Osinsky, Andrei, Nidhin Kurian Kalarickal
Published in arXiv.org (11.08.2024)
Published in arXiv.org (11.08.2024)
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Paper
Journal Article
beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Xia, Zhanbo, Xue, Hao, Joishi, Chandan, Mcglone, Joe, Kalarickal, Nidhin Kurian, Sohel, Shahadat H., Brenner, Mark, Arehart, Aaron, Ringel, Steven, Lodha, Saurabh, Lu, Wu, Rajan, Siddharth
Published in IEEE electron device letters (01.07.2019)
Published in IEEE electron device letters (01.07.2019)
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Journal Article
High electron density \({\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3\) modulation doping using ultra-thin (1 nm) spacer layer
Nidhin Kurian Kalarickal, Xia, Zhanbo, Mcglone, Joe, Liu, Yumo, Moore, Wyatt, Arehart, Aaron, Ringel, Steve, Rajan, Siddharth
Published in arXiv.org (25.10.2019)
Published in arXiv.org (25.10.2019)
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Paper
Journal Article
Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Nidhin Kurian Kalarickal, Xia, Zhanbo, McGlone, Joe, Krishnamoorthy, Sriram, Moore, Wyatt, Brenner, Mark, Arehart, Aaron R, Ringel, Steven A, Rajan, Siddharth
Published in arXiv.org (03.08.2019)
Published in arXiv.org (03.08.2019)
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Paper
Journal Article
Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Nidhin Kurian Kalarickal, Feng, Zixuan, A F M Anhar Uddin Bhuiyan, Xia, Zhanbo, McGlone, Joe F, Moore, Wyatt, Arehart, Aaron R, Ringel, Steven A, Zhao, Hongping, Rajan, Siddharth
Published in arXiv.org (03.06.2020)
Published in arXiv.org (03.06.2020)
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Paper
Journal Article
Three-step field-plated β-Ga 2 O 3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown
Gilankar, Advait, Islam, Ahmad Ehteshamul, McCartney, Martha R., Katta, Abishek, Das, Nabasindhu, Smith, David J., Kalarickal, Nidhin Kurian
Published in Applied physics express (01.04.2024)
Published in Applied physics express (01.04.2024)
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Journal Article
β-(Al 0.18 Ga 0.82 ) 2 O 3 /Ga 2 O 3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
Kalarickal, Nidhin Kurian, Xia, Zhanbo, Huang, Hsien-Lien, Moore, Wyatt, Liu, Yumo, Brenner, Mark, Hwang, Jinwoo, Rajan, Siddharth
Published in IEEE electron device letters (01.06.2021)
Published in IEEE electron device letters (01.06.2021)
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Journal Article
High-Current Perovskite Oxide BaTiO 3 /BaSnO 3 Heterostructure Field Effect Transistors
Cheng, Junao, Wang, Caiyu, Freeze, Christopher, Shoron, Omor, Combs, Nick, Yang, Hao, Kalarickal, Nidhin Kurian, Xia, Zhanbo, Stemmer, Susanne, Rajan, Siddharth, Lu, Wu
Published in IEEE electron device letters (01.04.2020)
Published in IEEE electron device letters (01.04.2020)
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Journal Article
Ultra-Wide Bandgap Semiconductor Transistors for mm-wave Applications
Joishi, Chandan, Kalarickal, Nidhin Kurian, Rahman, Wahidur, Lu, Wu, Rajan, Siddharth
Published in 2022 Device Research Conference (DRC) (26.06.2022)
Published in 2022 Device Research Conference (DRC) (26.06.2022)
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