Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole
Smith, Jeffrey A., Ni, Kai, Takeuchi, Hideki, Stephenson, Robert J., Chen, Yi-Ann, Hytha, Marek, Li, Shuyi, Nicollian, Paul E., Mears, Robert J., Datta, Suman
Published in Journal of applied physics (14.11.2021)
Published in Journal of applied physics (14.11.2021)
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Journal Article
Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel
Takeuchi, Hideki, Mears, Robert J., Hytha, Marek, Connelly, Daniel J., Nicollian, Paul E., Wong, Hiu-Yung
Published in 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) (28.11.2022)
Published in 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) (28.11.2022)
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Conference Proceeding
Two-trap model for low voltage stress-induced leakage current in ultrathin SiON dielectrics
Nicollian, Paul E., Krishnan, Anand T., Reddy, Vijay K.
Published in Journal of applied physics (01.09.2008)
Published in Journal of applied physics (01.09.2008)
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Journal Article
Positive bias temperature instability induced positive charge generation in P+ Poly/SiON pMOSFET's
Hokyung Park, Nicollian, Paul E., Reddy, V.
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
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Conference Proceeding
Gate dielectric reliability in the sub threshold regime
Nicollian, P E, Chancellor, C A, Krishnan, A T
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown
Nicollian, P.E., Krishnan, A.T., Chancellor, C.A., Khamankar, R.B., Chakravarthi, S., Bowen, C., Reddy, V.K.
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
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Conference Proceeding
The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics
Nicollian, P.E., Krishnan, A.T., Chancellor, C.A., Khamankar, R.B.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Conference Proceeding
The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics
Nicollian, P.E., Krishnan, A.T., Bowen, C., Chakravarthi, S., Chancellor, C.A., Khamankar, R.B.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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Conference Proceeding
Low voltage stress-induced-leakage-current in ultrathin gate oxides
Nicollian, P.E., Rodder, M., Grider, D.T., Chen, P., Wallace, R.M., Hattangady, S.V.
Published in 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) (1999)
Published in 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) (1999)
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Conference Proceeding
Semiconductor Device Having A Dielectric Layer With A Uniform Nitrogen Profile
KHAMANKAR, REJESH, NICOLLIAN, PAUL E, RODDER, MARK S, EASON, KWAME N, HATTANGADY, SUNIL, HU, JERRY
Year of Publication 08.09.2004
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Year of Publication 08.09.2004
Patent
Semiconductor device having a dielectric layer with a uniform nitrogen profile
EASON KWAME N, KHAMANKAR RAJESH, HU JERRY, RODDER MARK S, NICOLLIAN PAUL E, HATTANGADY SUNIL
Year of Publication 21.08.2003
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Year of Publication 21.08.2003
Patent
Semiconductor Device Having A Dielectric Layer With A Uniform Nitrogen Profile
KHAMANKAR, REJESH, NICOLLIAN, PAUL E, RODDER, MARK S, EASON, KWAME N, HATTANGADY, SUNIL, HU, JERRY
Year of Publication 07.05.2003
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Year of Publication 07.05.2003
Patent