Image Force Corrections to Tung's Inhomogeneous Schottky Barrier Model
Nicholls, Jordan R., Dimitrijev, Sima
Published in IEEE transactions on electron devices (01.12.2021)
Published in IEEE transactions on electron devices (01.12.2021)
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Journal Article
Regression Model for the Specific Contact Resistance of SiC Ohmic Contacts
Nicholls, Jordan R., Dimitrijev, Sima
Published in IEEE transactions on semiconductor manufacturing (01.11.2021)
Published in IEEE transactions on semiconductor manufacturing (01.11.2021)
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Journal Article
The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes
Nicholls, Jordan R., Dimitrijev, Sima, Tanner, Philip, Han, Jisheng
Published in IEEE transactions on electron devices (01.04.2019)
Published in IEEE transactions on electron devices (01.04.2019)
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Journal Article
Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides
Nicholls, Jordan R., Vidarsson, Arnar M., Haasmann, Daniel, Sveinbjornsson, Einar O., Dimitrijev, Sima
Published in IEEE transactions on electron devices (01.09.2020)
Published in IEEE transactions on electron devices (01.09.2020)
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Journal Article
Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods
Vidarsson, Arnar M., Nicholls, Jordan R., Haasmann, Daniel, Dimitrijev, Sima, Sveinbjörnsson, Einar Ö.
Published in Journal of applied physics (07.06.2022)
Published in Journal of applied physics (07.06.2022)
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Journal Article
A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements
Nicholls, Jordan R., Vidarsson, Arnar M., Haasmann, Daniel, Sveinbjörnsson, Einar Ö., Dimitrijev, Sima
Published in Journal of applied physics (07.02.2021)
Published in Journal of applied physics (07.02.2021)
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Journal Article