The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method
Feng, Qian, Li, Li-Mei, Hao, Yue, Ni, Jin-Yu, Zhang, Jin-Cheng
Published in Solid-state electronics (01.09.2009)
Published in Solid-state electronics (01.09.2009)
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Journal Article
Chirality-selective topological magnon phase transition induced by interplay of anisotropic exchange interactions in honeycomb ferromagnet
Ni, Jin-Yu, Zheng, Xia-Ming, Wei, Peng-Tao, Liu, Da-Yong, Zou, Liang-Jian
Published in Journal of physics. Condensed matter (26.06.2024)
Published in Journal of physics. Condensed matter (26.06.2024)
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Journal Article
AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V
Yu, Xin-Xin, Ni, Jin-Yu, Li, Zhong-Hui, Kong, Cen, Zhou, Jian-Jun, Dong, Xun, Pan, Lei, Kong, Yue-Chan, Chen, Tang-Sheng
Published in Chinese physics letters (01.03.2014)
Published in Chinese physics letters (01.03.2014)
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Journal Article
GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition
Yuan-Zheng, Yue, Yue, Hao, Qian, Feng, Jin-Cheng, Zhang, Xiao-Hua, Ma, Jin-Yu, Ni
Published in Chinese physics letters (01.08.2007)
Published in Chinese physics letters (01.08.2007)
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Journal Article
A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress
Yuan-Zheng, Yue, Yue, Hao, Jin-Cheng, Zhang, Qian, Feng, Jin-Yu, Ni, Xiao-Hua, Ma
Published in Chinese physics B (01.04.2008)
Published in Chinese physics B (01.04.2008)
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Journal Article
High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors
Wen-Ping, Gu, Huan-Tao, Duan, Jin-Yu, Ni, Yue, Hao, Jin-Cheng, Zhang, Qian, Feng, Xiao-Hua, Ma
Published in Chinese physics B (01.04.2009)
Published in Chinese physics B (01.04.2009)
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Journal Article
Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor
Zhi-Ming, Li, Yue, Hao, Jin-Cheng, Zhang, Sheng-Rui, Xu, Jin-Yu, Ni, Xiao-Wei, Zhou
Published in Chinese physics B (01.11.2009)
Published in Chinese physics B (01.11.2009)
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Journal Article
Topological magnons in one-dimensional ferromagnetic Su-Schrieffer-Heeger model with anisotropic interaction
Wei, Peng-Tao, Ni, Jin-Yu, Zheng, Xia-Ming, Liu, Da-Yong, Zou, Liang-Jian
Published in arXiv.org (27.10.2022)
Published in arXiv.org (27.10.2022)
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Paper
Journal Article
Development and validation of a circulating tumor DNA-based optimization-prediction model for short-term postoperative recurrence of endometrial cancer
Liu, Yuan, Lu, Xiao-Ning, Guo, Hui-Ming, Bao, Chan, Zhang, Juan, Jin, Yu-Ni
Published in World journal of clinical cases (26.06.2024)
Published in World journal of clinical cases (26.06.2024)
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Journal Article
diversity of human papillomavirus infection among human immunodeficiency virus-infected women in Yunnan, China
Zhang, Hong-Yun, Fei, Man-Dong, Jiang, Yong, Fei, Qiu-Yue, Qian, Hong, Xu, Lin, Jin, Yu-Ni, Jiang, Cheng-Qin, Li, Hai-Xia, Tiggelaar, Sarah M, Smith, Jennifer S, Sahasrabuddhe, Vikrant V, Qiao, You-Lin
Published in Virology journal (07.12.2014)
Published in Virology journal (07.12.2014)
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Journal Article
Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with AlxGa1−xN/AlyGa1−yN SuperlatticesSupported by the National Natural Science Foundation of China under Grant Nos 61076120 and 61106130, and the Natural Science Foundation and Scientific Support Plan of Jiangsu Province under Grant Nos BK2012516, BK20131072, and BE2012007
Pan, Lei, Ni, Jin-Yu, Yu, Xin-Xin, Dong, Xun, Peng, Da-Qing, Li, Chuan-Hao, Li, Zhong-Hui, Chen, Tang-Sheng
Published in Chinese physics letters (01.05.2015)
Published in Chinese physics letters (01.05.2015)
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Journal Article
Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al x Ga 1− x N/Al y Ga 1− y N Superlattices
Pan, Lei, Ni, Jin-Yu, Yu, Xin-Xin, Dong, Xun, Peng, Da-Qing, Li, Chuan-Hao, Li, Zhong-Hui, Chen, Tang-Sheng
Published in Chinese physics letters (01.05.2015)
Published in Chinese physics letters (01.05.2015)
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Journal Article
Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al sub(x)Ga sub(1-x) N/Al sub(y)Ga sub(1-y)N Superlattices
Pan, Lei, Ni, Jin-Yu, Yu, Xin-Xin, Dong, Xun, Peng, Da-Qing, Li, Chuan-Hao, Li, Zhong-Hui, Chen, Tang-Sheng
Published in Chinese physics letters (01.05.2015)
Published in Chinese physics letters (01.05.2015)
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Journal Article
The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
Zhang, JinFeng, Hao, Yue, Zhang, JinCheng, Ni, JinYu
Published in Science China. Information sciences (01.06.2008)
Published in Science China. Information sciences (01.06.2008)
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Journal Article
Effect of reactor pressure on the growth rate and structural properties of GaN films
Ni, JinYu, Hao, Yue, Zhang, JinCheng, Yang, LinAn
Published in Chinese science bulletin (01.08.2009)
Published in Chinese science bulletin (01.08.2009)
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Journal Article
The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment
Qian, Feng, Yuan, Tian, Zhi-Wei, Bi, Yuan-Zheng, Yue, Jin-Yu, Ni, Jin-Cheng, Zhang, Yue, Hao, Lin-An, Yang
Published in Chinese physics B (01.07.2009)
Published in Chinese physics B (01.07.2009)
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Journal Article
GaN MOS-HEMT Using Ultra-Thin Al 2 O 3 Dielectric Grown by Atomic Layer Deposition
Yuan-Zheng, Yue, Yue, Hao, Qian, Feng, Jin-Cheng, Zhang, Xiao-Hua, Ma, Jin-Yu, Ni
Published in Chinese physics letters (01.08.2007)
Published in Chinese physics letters (01.08.2007)
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Journal Article