Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
Syaranamual, G.J., Sasangka, W.A., Made, R.I., Arulkumaran, S., Ng, G.I., Foo, S.C., Gan, C.L., Thompson, C.V.
Published in Microelectronics and reliability (01.09.2016)
Published in Microelectronics and reliability (01.09.2016)
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Journal Article
(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design
Fitzgerald, Eugene A, Lee, K.E., Yoon, Soon-Fatt, Chua, S.J., Tan, Chuan Seng, Ng, G.I., Zhou, X., Gong, Xiao, Chang, J.S., Peh, L.S., Boon, C.C., Antoniadis, D.a., Yadav, Sachin, Nguyen, X.S., Kohen, D.a., Kumar, Annie, Zhang, Li, Lee, Kwang Hong, Liu, Z.H., Chain, S.B., Ge, T, Choi, P.
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Journal Article
(Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices
Fitzgerald, Eugene A, Lee, K.E., Zhang, Li, Huang, C.C., Kadir, A., Bao, Shuyu, Ren, Z., Wang, C., Wang, Y., Lee, Kwang Hong, Liu, Z.H., Palacios, Tomas, Tan, Chuan Seng, Ng, G.I., Chua, S.J.
Published in ECS transactions (23.08.2016)
Published in ECS transactions (23.08.2016)
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Journal Article
Improved Microwave Noise Performance by SiN Passivation in AlGaN/GaN HEMTs on Si
Liu, Z.H., Arulkumaran, S., Ng, G.I.
Published in IEEE microwave and wireless components letters (01.06.2009)
Published in IEEE microwave and wireless components letters (01.06.2009)
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Journal Article
Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes
Whiteside, M., Arulkumaran, S., Dikme, Y., Sandupatla, A., Ng, G.I.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.2020)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.2020)
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Journal Article
Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer
Abhinay, S., Arulkumaran, S., Ng, G.I., Ranjan, K., Deki, M., Nitta, S., Honda, Y., Amano, H.
Published in Japanese Journal of Applied Physics (01.01.2020)
Published in Japanese Journal of Applied Physics (01.01.2020)
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Journal Article
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
Tan, H.T., Gao, Y., Syaranamual, G.J., Sasangka, W.A., Foo, S.C., Lee, K.H., Arulkumaran, S., Ng, G.I., Thompson, C.V., Gan, C.L.
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
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Journal Article
Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy
ZHENG, H. O, RADHAKRISHNAN, K, WANG, H, ZHANG, P. H, YOON, S. F, NG, G. I
Published in Journal of crystal growth (01.03.1999)
Published in Journal of crystal growth (01.03.1999)
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Journal Article
Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures
Zheng, H.Q, Yoon, S.F, Gay, B.P, Mah, K.W, Radhakrishnan, K, Ng, G.I
Published in Journal of crystal growth (15.06.2000)
Published in Journal of crystal growth (15.06.2000)
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Journal Article
The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy
Yoon, S.F., Zhang, P.H., Zheng, H.Q., Radhakrishnan, K., Ng, G.I.
Published in Journal of crystal growth (01.10.1998)
Published in Journal of crystal growth (01.10.1998)
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Journal Article
Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
Arulkumaran, S., Liu, Z.H., Ng, G.I., Cheong, W.C., Zeng, R., Bu, J., Wang, H., Radhakrishnan, K., Tan, C.L.
Published in Thin solid films (26.03.2007)
Published in Thin solid films (26.03.2007)
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Conference Proceeding
High-performance modulation-doped AlGaAs/InGaAs thermopiles for uncooled infrared FPA application
Abe, M., Abe, Y., Kogushi, N., Ang, K.S., Hofstetter, R., Wang, H., Ng, G.I.
Published in Infrared physics & technology (01.07.2013)
Published in Infrared physics & technology (01.07.2013)
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Journal Article
Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors
Arulkumaran, S., Ng, G.I., Lee, C.H., Liu, Z.H., Radhakrishnan, K., Dharmarasu, N., Sun, Z.
Published in Solid-state electronics (01.11.2010)
Published in Solid-state electronics (01.11.2010)
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Journal Article
Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate
Liu, Z.H., Arulkumaran, S., Ng, G.I.
Published in 2009 IEEE MTT-S International Microwave Symposium Digest (01.06.2009)
Published in 2009 IEEE MTT-S International Microwave Symposium Digest (01.06.2009)
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Conference Proceeding
Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD
Abhinay, S., Arulkumaran, S., Ng, G.I., Ranjan, K., Deki, M., Nitta, S., Honda, Y., Amano, H.
Published in 2019 Electron Devices Technology and Manufacturing Conference (EDTM) (01.03.2019)
Published in 2019 Electron Devices Technology and Manufacturing Conference (EDTM) (01.03.2019)
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Conference Proceeding
Temperature-dependent microwave noise characteristics of AlGaN/GaN HEMTs on silicon substrate
Liu, Z.H., Arulkumaran, S., Ng, G.I., Xu, T.
Published in 2008 Device Research Conference (01.06.2008)
Published in 2008 Device Research Conference (01.06.2008)
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Conference Proceeding
Optimization of In xGa 1− xP/In 0.2Ga 0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy
Zheng, H.Q, Yoon, S.F, Gay, B.P, Mah, K.W, Radhakrishnan, K, Ng, G.I
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2000)
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