Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors
Young, Chadwin D., Neugroschel, Arnost, Majumdar, Kausik, Matthews, Ken, Wang, Zhe, Hobbs, Chris
Published in Journal of applied physics (21.01.2015)
Published in Journal of applied physics (21.01.2015)
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Journal Article
Gated Diode Investigation of Bias Temperature Instability in High- \kappa FinFETs
Young, Chadwin D, Neugroschel, Arnost, Matthews, Kenneth, Smith, Casey, Dawei Heh, Hokyung Park, Hussein, Muhammad M, Taylor, William, Bersuker, Gennadi
Published in IEEE electron device letters (01.07.2010)
Published in IEEE electron device letters (01.07.2010)
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Journal Article
Gated Diode Investigation of Bias Temperature Instability in High- [Formula Omitted] FinFETs
Young, Chadwin D, Neugroschel, Arnost, Matthews, Kenneth, Smith, Casey, Heh, Dawei, Park, Hokyung, Hussein, Muhammad M, Taylor, William, Bersuker, Gennadi
Published in IEEE electron device letters (01.07.2010)
Published in IEEE electron device letters (01.07.2010)
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Journal Article
Trapped charge induced gate oxide breakdown
Neugroschel, Arnost, Wang, Lingquan, Bersuker, Gennadi
Published in Journal of applied physics (15.09.2004)
Published in Journal of applied physics (15.09.2004)
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Journal Article
Electrical characterization and analysis techniques for the high- κ era
Young, Chadwin D., Heh, Dawei, Neugroschel, Arnost, Choi, Rino, Lee, Byoung Hun, Bersuker, Gennadi
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Journal Article
Conference Proceeding
Direct-current measurements of oxide and interface traps on oxidized silicon
Neugroschel, A., Chih-Tang Sah, Han, K.M., Carroll, M.S., Nishida, T., Kavalieros, J.T., Yi Lu
Published in IEEE transactions on electron devices (01.09.1995)
Published in IEEE transactions on electron devices (01.09.1995)
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Journal Article
Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks
Young, Chadwin D., Bersuker, Gennadi, Heh, Dawei, Neugroschel, Arnost, Choi, Rino, Kang, Chang Yong, Tun, Joey, Lee, Byoung Hun
Published in ECS transactions (28.09.2007)
Published in ECS transactions (28.09.2007)
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Journal Article
Degradation of silicon bipolar junction transistors at high forward current densities
Carroll, M.S., Neugroschel, A., Chih-Tang Sah
Published in IEEE transactions on electron devices (01.01.1997)
Published in IEEE transactions on electron devices (01.01.1997)
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Journal Article
Temperature dependence of surface recombination current in MOS transistors
Yih Wang, Neugroschel, A., Chih-Tang Sah
Published in IEEE transactions on electron devices (01.09.2001)
Published in IEEE transactions on electron devices (01.09.2001)
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Journal Article
Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress
Neugroschel, A., Chih-Tang Sah, Carroll, M.S.
Published in IEEE transactions on electron devices (01.08.1996)
Published in IEEE transactions on electron devices (01.08.1996)
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Journal Article
Profiling interface traps in MOS transistors by the DC current-voltage method
Chih-Tang Sah, Neugroschel, A., Han, K.M., Kavalieros, J.T.
Published in IEEE electron device letters (01.02.1996)
Published in IEEE electron device letters (01.02.1996)
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Journal Article
Accelerated reverse emitter-base bias stress methodologies and time-to-failure application
Neugroschel, A., Chih-Tang Sah, Carroll, M.S.
Published in IEEE electron device letters (01.03.1996)
Published in IEEE electron device letters (01.03.1996)
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Journal Article