Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C
Neudeck, Philip G., Spry, David J., Liangyu Chen, Prokop, Norman F., Krasowski, Michael J.
Published in IEEE electron device letters (01.08.2017)
Published in IEEE electron device letters (01.08.2017)
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Journal Article
Extreme temperature 6H-SiC JFET integrated circuit technology
Neudeck, Philip G., Garverick, Steven L., Spry, David J., Chen, Liang-Yu, Beheim, Glenn M., Krasowski, Michael J., Mehregany, Mehran
Published in Physica status solidi. A, Applications and materials science (01.10.2009)
Published in Physica status solidi. A, Applications and materials science (01.10.2009)
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Journal Article
Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions
Neudeck, Philip G., Chen, Liangyu, Meredith, Roger D., Lukco, Dorothy, Spry, David J., Nakley, Leah M., Hunter, Gary W.
Published in IEEE journal of the Electron Devices Society (01.01.2019)
Published in IEEE journal of the Electron Devices Society (01.01.2019)
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Journal Article
CIB: An Improved Communication Architecture for Real-Time Monitoring of Aerospace Materials, Instruments, and Sensors on the ISS
Spina, Danny C., Neudeck, Philip G., Jenkins, Phillip P., Greer, Lawrence C., Flatico, Joseph M., Prokop, Norman F., Krasowski, Michael J., Chen, Liangyu
Published in TheScientificWorld (01.01.2013)
Published in TheScientificWorld (01.01.2013)
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Journal Article
Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect
Spry, David J., Neudeck, Philip G., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
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Journal Article
Optimization of TaSi2 Processing for 500 °C Durable SiC JFET-R Integrated Circuits
Rajgopal, Srihari, Neudeck, Philip G., Spry, David J., Chang, Carl W., Gonzalez, Jose M.
Published in Key engineering materials (06.06.2023)
Published in Key engineering materials (06.06.2023)
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Journal Article
Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs
Chen, Liang Yu, Neudeck, Philip G., Lukco, Dorothy, Spry, David J.
Published in Key engineering materials (06.06.2023)
Published in Key engineering materials (06.06.2023)
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Journal Article
Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions
Neudeck, Philip G., Meredith, Roger D., Chen, Liangyu, Spry, David J., Nakley, Leah M., Hunter, Gary W.
Published in AIP advances (01.12.2016)
Published in AIP advances (01.12.2016)
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Journal Article
Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C
Chen, Liang Yu, Spry, David J., Neudeck, Philip G.
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C
NEUDECK, Philip G, SPRY, David J, PROKOP, Norman F, CHEN, Liang-Yu, BEHEIM, Glenn M, OKOJIE, Robert S, CHANG, Carl W, MEREDITH, Roger D, FERRIER, Terry L, EVANS, Laura J, KRASOWSKI, Michael J
Published in IEEE electron device letters (01.05.2008)
Published in IEEE electron device letters (01.05.2008)
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Journal Article
Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
Lukco, Dorothy, Beheim, Glenn M., Spry, David J., Neudeck, Philip G., Chang, Carl W., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation
Cochrane, Corey J., Ashton, James, Lenahan, Patrick M., Spry, David J., Kraus, Hannes, Neudeck, Philip G., Waskiewicz, Ryan J.
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits
Chang, Carl W., Neudeck, Philip G., Beheim, Glenn M., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu, Spry, David J., Lukco, Dorothy
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C
Neudeck, Philip G., Spry, David J., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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