Search Results - "Neubert, Barbara" :: K.UTB vyhledávací portál

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

by Scholz, Ferdinand, Wunderer, Thomas, Neubert, Barbara, Feneberg, Martin, Thonke, Klaus
Published in MRS bulletin (01.05.2009)

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GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets: Nonpolar and Semipolar Group III Nitride-Based Materials

by SCHOLZ, Ferdinand, WUNDERER, Thomas, NEUBERT, Barbara, FENEBERG, Martin, THONKE, Klaus
Published in MRS bulletin (2009)

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Challenges, Trends and Solutions for 3D Interconnects in Lithography and Wafer Level Bonding Techniques

by Zoberbier, Margarete, Hell, Erwin, Cook, Kathy, Hennemayer, Marc, Neubert, Barbara
Published in ECS transactions (06.03.2009)

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Absorption and light scattering in InGaN-on-sapphire- and AlGaInP-based light-emitting diodes

by Sven-Silvius Schad, Neubert, B., Eichler, C., Scherer, M., Habel, F., Seyboth, M., Scholz, F., Hofstetter, D., Unger, P., Schmid, W., Karnutsch, C., Streubel, K.
Published in Journal of lightwave technology (01.10.2004)

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High-efficiency red and infrared light-emitting diodes using radial outcoupling taper

by Schmid, W., Scherer, M., Karnutsch, C., Plossl, A., Wegleiter, W., Schad, S.-S., Neubert, B., Streubel, K.
Published in IEEE journal of selected topics in quantum electronics (01.03.2002)

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Device for treating surface of disk-shaped substrate by application and hydro-extracting of treatment liquid and for wet-chemical treatment of wafer during semiconductor manufacturing, has substrate carrier turned around carrier surface

by GABRIEL, MARKUS, NEUBERT, BARBARA
Year of Publication 04.03.2010

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Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby

by SCHOLZ FERDINAND, NEUBERT BARBARA, BRUECKNER PETER, HABEL FRANK, WUNDERER THOMAS
Year of Publication 01.06.2010

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Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby

by Habel, Frank, Scholz, Ferdinand, Neubert, Barbara, Brückner, Peter, Wunderer, Thomas
Year of Publication 01.06.2010

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Processes for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices

by WUNDERER, THOMAS, SCHOLZ, FERDINAND, HABEL, FRANK, NEUBERT, BARBARA, BRÜCKNER, PETER
Year of Publication 30.06.2009

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Free-Standing III-N layers or devices obtained by selective masking of III-N layers during III-N layer growth

by WUNDERER, THOMAS, SCHOLZ, FERDINAND, HABEL, FRANK, NEUBERT, BARBARA, BRUECKNER, PETER
Year of Publication 29.04.2009

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Processes for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices

by WUNDERER, THOMAS, SCHOLZ, FERDINAND, HABEL, FRANK, NEUBERT, BARBARA, BRUECKNER, PETER
Year of Publication 14.01.2009

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Free-Standing III-N layers or devices obtained by selective masking of III-N layers during III-N layer growth

by WUNDERER, THOMAS, SCHOLZ, FERDINAND, HABEL, FRANK, NEUBERT, BARBARA, BRUECKNER, PETER
Year of Publication 03.09.2008

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Introduction of a unified equipment platform for UV initiated processes in conjunction with the application of electrostatic carriers as thin wafer handling solution

by Tonnies, D., Gabriel, M., Neubert, B., Hennemeyer, M., Zoberbier, M., Zoberbier, R.
Published in 2009 European Microelectronics and Packaging Conference (01.06.2009)

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Conference Proceeding