Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates
Hagedorn, Sylvia, Kolbe, Tim, Schmidt, Gordon, Bertram, Frank, Netzel, Carsten, Knauer, Arne, Veit, Peter, Christen, Jürgen, Weyers, Markus
Published in Applied physics letters (05.02.2024)
Published in Applied physics letters (05.02.2024)
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Journal Article
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Hagedorn, Sylvia, Walde, Sebastian, Knauer, Arne, Susilo, Norman, Pacak, Daniel, Cancellara, Leonardo, Netzel, Carsten, Mogilatenko, Anna, Hartmann, Carsten, Wernicke, Tim, Kneissl, Michael, Weyers, Markus
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
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Journal Article
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
Wernicke, Tim, Schade, Lukas, Netzel, Carsten, Rass, Jens, Hoffmann, Veit, Ploch, Simon, Knauer, Arne, Weyers, Markus, Schwarz, Ulrich, Kneissl, Michael
Published in Semiconductor science and technology (08.02.2012)
Published in Semiconductor science and technology (08.02.2012)
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Journal Article
Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
Martens, Martin, Mehnke, Frank, Kuhn, Christian, Reich, Chirstoph, Kueller, Viola, Knauer, Arne, Netzel, Carsten, Hartmann, Carsten, Wollweber, Juergen, Rass, Jens, Wernicke, Tim, Bickermann, Matthias, Weyers, Markus, Kneissl, Michael
Published in IEEE photonics technology letters (15.02.2014)
Published in IEEE photonics technology letters (15.02.2014)
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Journal Article
Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability
Mahler, Felix, Tomm, Jens W., Reimann, Klaus, Woerner, Michael, Hoffmann, Veit, Netzel, Carsten, Weyers, Markus, Elsaesser, Thomas
Published in Journal of applied physics (14.05.2019)
Published in Journal of applied physics (14.05.2019)
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Journal Article
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes
Hagedorn, Sylvia, Walde, Sebastian, Susilo, Norman, Netzel, Carsten, Tillner, Nadine, Unger, Ralph-Stephan, Manley, Phillip, Ziffer, Eviathar, Wernicke, Tim, Becker, Christiane, Lugauer, Hans-Jürgen, Kneissl, Michael, Weyers, Markus
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
Netzel, Carsten, Hoffmann, Veit, Tomm, Jens W., Mahler, Felix, Einfeldt, Sven, Weyers, Markus
Published in physica status solidi (b) (01.06.2020)
Published in physica status solidi (b) (01.06.2020)
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Journal Article
Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes
Dinh, Duc V., Corbett, Brian, Parbrook, Peter J., Koslow, Ingrid. L., Rychetsky, Monir, Guttmann, Martin, Wernicke, Tim, Kneissl, Michael, Mounir, Christian, Schwarz, Ulrich, Glaab, Johannes, Netzel, Carsten, Brunner, Frank, Weyers, Markus
Published in Journal of applied physics (07.10.2016)
Published in Journal of applied physics (07.10.2016)
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Journal Article
UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
Jeschke, Joerg, Martens, Martin, Knauer, Arne, Kueller, Viola, Zeimer, Ute, Netzel, Carsten, Kuhn, Christian, Krueger, Felix, Reich, Christoph, Wernicke, Tim, Kneissl, Michael, Weyers, Markus
Published in IEEE photonics technology letters (15.09.2015)
Published in IEEE photonics technology letters (15.09.2015)
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Journal Article
Semipolar GaN grown on m-plane sapphire using MOVPE
Wernicke, Tim, Netzel, Carsten, Weyers, Markus, Kneissl, Michael
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
Quantum Efficiency Analysis of Near-Ultraviolet Emitting AlGaN and AlInGaN Structures
Netzel, Carsten, Knauer, Arne, Weyers, Markus
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs
Brunner, Frank, Bahat-Treidel, Eldad, Cho, Melanie, Netzel, Carsten, Hilt, Oliver, Würfl, Joachim, Weyers, Markus
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
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Journal Article
Temperature Dependence of Dark Spot Diameters in GaN and AlGaN
Netzel, Carsten, Knauer, Arne, Brunner, Frank, Mogilatenko, Anna, Weyers, Markus
Published in physica status solidi (b) (01.11.2021)
Published in physica status solidi (b) (01.11.2021)
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Journal Article
High‐Temperature Annealing of Si‐Doped AlGaN
Zainal, Norzaini, Hagedorn, Sylvia, Netzel, Carsten, Kolbe, Tim, Weyers, Markus
Published in Physica status solidi. A, Applications and materials science (01.04.2024)
Published in Physica status solidi. A, Applications and materials science (01.04.2024)
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Journal Article
Gallium Phosphide Nanowires Grown on SiO 2 by Gas-Source Molecular Beam Epitaxy
Kang, Songdan, Golz, Christian, Netzel, Carsten, Mediavilla, Irene, Serrano, Jorge, Jiménez, Juan, Hatami, Fariba
Published in Crystal growth & design (05.04.2023)
Published in Crystal growth & design (05.04.2023)
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Journal Article
Gallium Phosphide Nanowires Grown on SiO2 by Gas-Source Molecular Beam Epitaxy
Kang, Songdan, Golz, Christian, Netzel, Carsten, Mediavilla, Irene, Serrano, Jorge, Jiménez, Juan, Hatami, Fariba
Published in Crystal growth & design (05.04.2023)
Published in Crystal growth & design (05.04.2023)
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Journal Article