Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching
Baharin, A., Pinto, R.S., Mishra, U.K., Nener, B.D., Parish, G.
Published in Thin solid films (31.03.2011)
Published in Thin solid films (31.03.2011)
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A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion
Mari, D., Bernardoni, M., Sozzi, G., Menozzi, R., Umana-Membreno, G.A., Nener, B.D.
Published in Microelectronics and reliability (01.02.2011)
Published in Microelectronics and reliability (01.02.2011)
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Conference Proceeding
Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates
Umana-Membreno, G.A., Fehlberg, T.B., Kolluri, S., Brown, D.F., Parish, G., Nener, B.D., Keller, S., Mishra, U.K., Faraone, L.
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Conference Proceeding
Study of Pd/Au metallisation and surface characteristics on Mg-doped GaN induced by low power inductively coupled plasma etching
Baharin, A., Kocan, M., Mishra, U.K., Parish, G., Nener, B.D.
Published in Optical materials (01.04.2010)
Published in Optical materials (01.04.2010)
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Conference Proceeding
Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
Umana-Membreno, G. A., Parish, G., Nener, B. D., Buttari, D., Keller, S., Mishra, U. K.
Published in Physica Status Solidi (b) (01.06.2007)
Published in Physica Status Solidi (b) (01.06.2007)
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Conference Proceeding
AlGaN/GaN-based biosensor for label-free detection of biological activity
Podolska, A., Hool, L.C., Pfleger, K.D.G., Mishra, U.K., Parish, G., Nener, B.D.
Published in Sensors and actuators. B, Chemical (01.02.2013)
Published in Sensors and actuators. B, Chemical (01.02.2013)
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HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
Dell, J. M., Antoszewski, J., Rais, M. H., Musca, C., White, J. K., Nener, B. D., Faraone, L.
Published in Journal of electronic materials (01.06.2000)
Published in Journal of electronic materials (01.06.2000)
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Optical quenching of photoconductivity in undoped n -GaN
Cai, S., Parish, G., Umana-Membreno, G. A., Dell, J. M., Nener, B. D.
Published in Journal of applied physics (01.02.2004)
Published in Journal of applied physics (01.02.2004)
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Journal Article
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition
Umana-Membreno, G.A., Parish, G., Fichtenbaum, N., Keller, S., Mishra, U.K., Nener, B.D.
Published in Journal of electronic materials (01.05.2008)
Published in Journal of electronic materials (01.05.2008)
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Journal Article
Low contact resistance to plasma-etched p-type GaN
BAHARIN, A, PINTO, R. S, MISHRA, U. K, NENER, B. D, PARISH, G
Published in Electronics letters (03.03.2011)
Published in Electronics letters (03.03.2011)
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Improved device technology for epitaxial Hg1-xCdxTe infrared photoconductor arrays
Siliquini, J F, Fynn, K A, Nener, B D, Faraone, L, Hartley, R H
Published in Semiconductor science and technology (01.08.1994)
Published in Semiconductor science and technology (01.08.1994)
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Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes
Parish, G., Kennedy, R.A., Umana-Membreno, G.A., Nener, B.D.
Published in Solid-state electronics (01.02.2008)
Published in Solid-state electronics (01.02.2008)
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Journal Article
Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN
Wee, D, Parish, G, Nener, B D
Published in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (01.12.2010)
Published in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (01.12.2010)
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Conference Proceeding
Annealing of C60o gamma radiation-induced damage in n-GaN Schottky barrier diodes
Umana-Membreno, G. A., Dell, J. M., Parish, G., Nener, B. D., Faraone, L., Keller, S., Mishra, U. K.
Published in Journal of applied physics (01.03.2007)
Published in Journal of applied physics (01.03.2007)
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