GaN electronics for high power, high temperature applications
Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cao, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., Abernathy, C.R., Han, J., Baca, A.G., Chyi, J.-I., Lee, C.-M., Nee, T.-E., Chuo, C.-C., Chu, S.N.G.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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Journal Article
Preparation and characterization of pentacene-based organic thin-film transistors with PVA passivation layers
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Journal Article
Conference Proceeding
Design and simulation in GaN based light emitting diodes using focused ion beam generated photonic crystals
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Journal Article
Conference Proceeding
Effects of nano-structured photonic crystals on light extraction enhancement of nitride light-emitting diodes
Wu, G.M., Yen, C.C., Chien, H.W., Lu, H.C., Chang, T.W., Nee, T.E.
Published in Thin solid films (31.05.2011)
Published in Thin solid films (31.05.2011)
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Journal Article
Conference Proceeding
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors
JOHNSON, J. W, GILA, B. P, REN, F, LUO, B, LEE, K. P, ABERNATHY, C. R, PEARION, S. J, CHYI, J. I, NEE, T. E, LEE, C. M, CHUO, C. C
Published in Journal of the Electrochemical Society (01.06.2001)
Published in Journal of the Electrochemical Society (01.06.2001)
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Journal Article
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
Zhang, A.P, Dang, G, Ren, F, Han, J, Cho, H, Pearton, S.J, Chyi, J.-I, Nee, T.-E, Lee, C.M, Chuo, C.C, Chu, S.N.G
Published in Solid-state electronics (01.07.2000)
Published in Solid-state electronics (01.07.2000)
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Journal Article
Schottky rectifiers fabricated on free-standing GaN substrates
Johnson, J.W., LaRoch, J.R., Ren, F., Gila, B.P., Overberg, M.E., Abernathy, C.R., Chyi, J.-I., Chuo, C.C., Nee, T.E., Lee, C.M., Lee, K.P., Park, S.S., Park, Y.J., Pearton, S.J.
Published in Solid-state electronics (01.03.2001)
Published in Solid-state electronics (01.03.2001)
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Journal Article
Spatial distribution of electrical properties in GaN p-i-n rectifiers
Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Zhang, A.P, Ren, F, Pearton, S.J, Chyi, J.-I, Nee, T.-E, Lee, C.-M, Chuo, C.-C
Published in Solid-state electronics (01.09.2000)
Published in Solid-state electronics (01.09.2000)
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Journal Article
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Zhang, A.P, Ren, F, Pearton, S.J, Chyi, J.-I, Nee, T.-E, Chuo, C.-C, Lee, C.-M
Published in Solid-state electronics (01.09.2000)
Published in Solid-state electronics (01.09.2000)
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Journal Article
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Zhang, A. P., Ren, F., Pearton, S. J., Chyi, J. -I., Nee, T. -E., Chou, C. -C., Lee, C. -M.
Published in Journal of electronic materials (01.03.2001)
Published in Journal of electronic materials (01.03.2001)
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Journal Article
Behavior of arsenic precipitation in low-temperature grown III–V arsenides
Chang, M.N, Hsieh, K.C, Nee, T.-E, Chuo, C.C, Chyi, J.-I
Published in Journal of crystal growth (01.05.1999)
Published in Journal of crystal growth (01.05.1999)
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Journal Article
Comparison of GaN p-i-n and Schottky rectifier performance
Zhan, A.P., Dang, G.T., Fan Ren, Hyun Cho, Kyu-Pil Lee, Pearton, S.J., Jenn-Inn Chyi, Nee, T.-Y., Chuo, C.-C.
Published in IEEE transactions on electron devices (01.03.2001)
Published in IEEE transactions on electron devices (01.03.2001)
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Journal Article
SiO[sub 2]/Gd[sub 2]O[sub 3]/GaN Metal Oxide Semiconductor Field Effect Transistors
Johnson, J. W., Gila, B. P., Luo, B., Lee, K. P., Abernathy, C. R., Pearton, S. J., Chyi, J. I., Nee, T. E., Lee, C. M., Chuo, C. C., Ren, F.
Published in Journal of the Electrochemical Society (2001)
Published in Journal of the Electrochemical Society (2001)
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Journal Article
Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems
Nee, Tzer-En, Shen, Hui-Tang, Wang, Jen-Cheng, Lin, Ray-Ming
Published in Journal of crystal growth (01.01.2006)
Published in Journal of crystal growth (01.01.2006)
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Journal Article
Conference Proceeding
Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure
Lin, Ray-Ming, Lin, Chung-Han, Wang, Jen-Cheng, Nee, Tzer-En, Fang, Bor-Ren, Wang, Ruey-Yu
Published in Journal of crystal growth (01.05.2005)
Published in Journal of crystal growth (01.05.2005)
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Journal Article
Conference Proceeding
High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy
NEE, T.-E, YEH, N.-T, LEE, J.-M, CHYI, J.-I, LEE, C.-T
Published in Journal of crystal growth (1999)
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Published in Journal of crystal growth (1999)
Conference Proceeding
Behavior of arsenic precipitation in low-temperature grown III-V arsenides
CHANG, M. N, HSIEH, K. C, NEE, T.-E, CHUO, C. C, CHYI, J.-I
Published in Journal of crystal growth (1999)
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Published in Journal of crystal growth (1999)
Conference Proceeding