Thin film silicon nanoparticle UV photodetector
Nayfeh, O.M., Rao, S., Smith, A., Therrien, J., Nayfeh, M.H.
Published in IEEE photonics technology letters (01.08.2004)
Published in IEEE photonics technology letters (01.08.2004)
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Journal Article
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
Nayfeh, H.M., Singh, D.V., Hergenrother, J.M., Sleight, J.W., Ren, Z., Dokumaci, O., Black, L., Chidambarrao, D., Venigalla, R., Pan, J., Natzle, W., Tessier, B.L., Ott, J.A., Khare, M., Guarini, K.W., Ieong, M., Haensch, W.
Published in IEEE electron device letters (01.04.2006)
Published in IEEE electron device letters (01.04.2006)
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Journal Article
Spatially selective electrochemical deposition of composite films of metal and luminescent Si nanoparticles
Smith, A, Belomoin, G, Nayfeh, M.H, Nayfeh, Taysir
Published in Chemical physics letters (29.04.2003)
Published in Chemical physics letters (29.04.2003)
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Journal Article
Strained silicon MOSFET technology
Hoyt, J.L., Nayfeh, H.M., Eguchi, S., Aberg, I., Xia, G., Drake, T., Fitzgerald, E.A., Antoniadis, D.A.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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Conference Proceeding
Observation of assembly of fluorescent Si nanoparticles under the influence of electric current
Smith, A, Chaieb, S, al Aql, A, Alsalhi, M, Nayfeh, M H
Published in Journal of nanoscience and nanotechnology (01.10.2002)
Published in Journal of nanoscience and nanotechnology (01.10.2002)
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Journal Article
A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs
Nayfeh, H.M., Hoyt, J.L., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
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Journal Article
Investigation of kink-induced excess RF channel noise in sub -50 nm PD-SOI MOSFETs
Wadje, Ninad S, Neeli, Vijaya Bhaskara, Jindal, R P, Nayfeh, H M, Todi, R
Published in 2010 IEEE International SOI Conference (SOI) (01.10.2010)
Published in 2010 IEEE International SOI Conference (SOI) (01.10.2010)
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Conference Proceeding
UV photodetectors with thin-film Si nanoparticle active medium
Nayfeh, M.H., Satish Rao, Nayfeh, O.M., Smith, A., Therrien, J.
Published in IEEE transactions on nanotechnology (01.11.2005)
Published in IEEE transactions on nanotechnology (01.11.2005)
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Journal Article
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
Guangrui Xia, Nayfeh, H.M., Lee, M.L., Fitzgerald, E.A., Antoniadis, D.A., Anjum, D.H., Jian Li, Hull, R., Klymko, N., Hoyt, J.L.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
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Journal Article
Parallel fabrication on chemically etched silicon using scanning tunneling microscopy
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Journal Article
Conference Proceeding
Time-dependent oscillations in a cw chemical laser unstable resonator
Sentman, L H, Nayfeh, M H, Townsend, S W, King, K, Tsioulos, G, Bichanich, J
Published in Applied optics (2004) (01.11.1985)
Published in Applied optics (2004) (01.11.1985)
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Journal Article
A hybrid biofuel cell based on electrooxidation of glucose using ultra-small silicon nanoparticles
Choi, Yongki, Wang, Gang, Nayfeh, Munir H., Yau, Siu-Tung
Published in Biosensors & bioelectronics (15.06.2009)
Published in Biosensors & bioelectronics (15.06.2009)
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Journal Article
Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS
Arora, R., En Xia Zhang, Seth, S., Cressler, J. D., Fleetwood, D. M., Schrimpf, R. D., Rosa, G. L., Sutton, A. K., Nayfeh, H. M., Freeman, G.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs
Nayfeh, H.M., Rovedo, N., Bryant, A., Narasimha, S., Kumar, A., Xiaojun Yu, Ning Su, Kumar, A., Sleight, J.W., Robison, R.R., Rausch, W., Mallela, H., Freeman, G.
Published in IEEE transactions on electron devices (01.12.2009)
Published in IEEE transactions on electron devices (01.12.2009)
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Journal Article
On the Effect of the Machine Saturation on SSR in Power Systems
M. Harb, L. Mili, A. H. Nayfeh, C-M. Chin, A.
Published in Electric machines and power systems (01.11.2000)
Published in Electric machines and power systems (01.11.2000)
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Journal Article
Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS
Arora, R, Moen, K A, Madan, A, Cressler, J D, Enxia Zhang, Fleetwood, D M, Schrimpf, R D, Sutton, A K, Nayfeh, H M
Published in 2010 IEEE International Integrated Reliability Workshop Final Report (01.10.2010)
Published in 2010 IEEE International Integrated Reliability Workshop Final Report (01.10.2010)
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Conference Proceeding
Impact of Source/Drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs
Arora, R, Seth, S, Poh, J C H, Cressler, J D, Sutton, A K, Nayfeh, H M, Rosa, G L, Freeman, G
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology
Holt, Judson R., Harley, Eric C., Adam, Thomas N., Jeng, Shwu-Jen, Tabakman, Keith, Pal, Rohit, Nayfeh, Hasan M., Black, Linda R., Kempisty, Jeremy J., Stoker, Matthew W., Dube, Abhishek, Schepis, Dominic J.
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Journal Article