Demonstration of quantum volume 64 on a superconducting quantum computing system
Jurcevic, Petar, Javadi-Abhari, Ali, Bishop, Lev S, Lauer, Isaac, Bogorin, Daniela F, Brink, Markus, Capelluto, Lauren, Günlük, Oktay, Itoko, Toshinari, Kanazawa, Naoki, Kandala, Abhinav, Keefe, George A, Krsulich, Kevin, Landers, William, Lewandowski, Eric P, McClure, Douglas T, Nannicini, Giacomo, Narasgond, Adinath, Nayfeh, Hasan M, Pritchett, Emily, Rothwell, Mary Beth, Srinivasan, Srikanth, Sundaresan, Neereja, Wang, Cindy, Wei, Ken X, Wood, Christopher J, Yau, Jeng-Bang, Zhang, Eric J, Dial, Oliver E, Chow, Jerry M, Gambetta, Jay M
Published in Quantum science and technology (01.04.2021)
Published in Quantum science and technology (01.04.2021)
Get full text
Journal Article
Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS
Arora, R., En Xia Zhang, Seth, S., Cressler, J. D., Fleetwood, D. M., Schrimpf, R. D., Rosa, G. L., Sutton, A. K., Nayfeh, H. M., Freeman, G.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
Get full text
Journal Article
SOI FinFET nFET-to-pFET Tracking Variability Compact Modeling and Impact on Latch Timing
Jie Deng, Rahman, Ardasheir, Thoma, Rainer, Schneider, Peter W., Johnson, Jim, Trombley, Henry, Ning Lu, Williams, Richard Q., Nayfeh, Hasan M., Kai Zhao, Robison, Russ, Ximeng Guan, Zamdmer, Noah, Shuma, Steve, Worth, Brian, Sundquist, James E., Foreman, Eric A., Springer, Scott K., Wachnik, Rick
Published in IEEE transactions on electron devices (01.06.2015)
Published in IEEE transactions on electron devices (01.06.2015)
Get full text
Journal Article
A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs
Nayfeh, H.M., Hoyt, J.L., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
Get full text
Journal Article
Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs
Nayfeh, H.M., Rovedo, N., Bryant, A., Narasimha, S., Kumar, A., Xiaojun Yu, Ning Su, Kumar, A., Sleight, J.W., Robison, R.R., Rausch, W., Mallela, H., Freeman, G.
Published in IEEE transactions on electron devices (01.12.2009)
Published in IEEE transactions on electron devices (01.12.2009)
Get full text
Journal Article
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
Guangrui Xia, Nayfeh, H.M., Lee, M.L., Fitzgerald, E.A., Antoniadis, D.A., Anjum, D.H., Jian Li, Hull, R., Klymko, N., Hoyt, J.L.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
Get full text
Journal Article
Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS
Arora, R, Moen, K A, Madan, A, Cressler, J D, Enxia Zhang, Fleetwood, D M, Schrimpf, R D, Sutton, A K, Nayfeh, H M
Published in 2010 IEEE International Integrated Reliability Workshop Final Report (01.10.2010)
Published in 2010 IEEE International Integrated Reliability Workshop Final Report (01.10.2010)
Get full text
Conference Proceeding
Impact of Source/Drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs
Arora, R, Seth, S, Poh, J C H, Cressler, J D, Sutton, A K, Nayfeh, H M, Rosa, G L, Freeman, G
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Get full text
Conference Proceeding
SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology
Holt, Judson R., Harley, Eric C., Adam, Thomas N., Jeng, Shwu-Jen, Tabakman, Keith, Pal, Rohit, Nayfeh, Hasan M., Black, Linda R., Kempisty, Jeremy J., Stoker, Matthew W., Dube, Abhishek, Schepis, Dominic J.
Published in ECS transactions (2009)
Published in ECS transactions (2009)
Get full text
Journal Article
Demonstration of quantum volume 64 on a superconducting quantum computing system
Jurcevic, Petar, Javadi-Abhari, Ali, Bishop, Lev S, Lauer, Isaac, Bogorin, Daniela F, Brink, Markus, Capelluto, Lauren, Oktay Günlük, Itoko, Toshinari, Kanazawa, Naoki, Kandala, Abhinav, Keefe, George A, Krsulich, Kevin, Landers, William, Lewandowski, Eric P, McClure, Douglas T, Nannicini, Giacomo, Narasgond, Adinath, Nayfeh, Hasan M, Pritchett, Emily, Rothwell, Mary Beth, Srinivasan, Srikanth, Sundaresan, Neereja, Wang, Cindy, Wei, Ken X, Wood, Christopher J, Jeng-Bang Yau, Zhang, Eric J, Dial, Oliver E, Chow, Jerry M, Gambetta, Jay M
Published in arXiv.org (04.09.2020)
Published in arXiv.org (04.09.2020)
Get full text
Paper
Journal Article
Butted SOI junction isolation structures and devices and method of fabrication
ROBISON ROBERT R, JOHNSON JEFFREY B, NARASIMHA SHREESH, NAYFEH HASAN M, ONTALUS VIOREL
Year of Publication 11.08.2015
Get full text
Year of Publication 11.08.2015
Patent
BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF FABRICATION
ROBISON ROBERT R, JOHNSON JEFFREY B, NARASIMHA SHREESH, NAYFEH HASAN M, ONTALUS VIOREL
Year of Publication 24.07.2014
Get full text
Year of Publication 24.07.2014
Patent
Butted SOI junction isolation structures and devices and method of fabrication
ROBISON ROBERT R, JOHNSON JEFFREY B, NARASIMHA SHREESH, NAYFEH HASAN M, ONTALUS VIOREL
Year of Publication 03.06.2014
Get full text
Year of Publication 03.06.2014
Patent