Importance of boundary conditions to conduction in short samples
Rosenberg, J.J., Yoffa, E.J., Nathan, M.I.
Published in IEEE transactions on electron devices (01.08.1981)
Published in IEEE transactions on electron devices (01.08.1981)
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Journal Article
Photonic microwave characteristics and modeling of an Al/sub 0.3/Ga/sub 0.7/As/GaAs/In/sub 0.13/Ga/sub 0.87/As double heterostructure pseudomorphic HEMT
Song, S.H., Kim, D.M., Kim, H.J., Kim, S.H., Kang, K.N., Nathan, M.I.
Published in IEEE microwave and guided wave letters (01.01.1998)
Published in IEEE microwave and guided wave letters (01.01.1998)
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Journal Article
Direct-Schottky-contact InP MESFET
Abid, Z., Gopinath, A., Williamson, F., Nathan, M.I.
Published in IEEE electron device letters (01.06.1991)
Published in IEEE electron device letters (01.06.1991)
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Journal Article
Excess current in n +GaAsAl xGa 1− xAsnGaAs heterojunctions
Lu, S.S., Lee, K.R., Lee, K.H., Nathan, M.I., Heiblum, M., Wright, S.L.
Published in Surface science (1990)
Published in Surface science (1990)
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Journal Article
VA-1 measuring barrier heights in GaAs-AlGaAs and metal-AlGaAs junctions by internal photoemission
Heiblum, M., Nathan, M.I., Eizenberg, E.
Published in IEEE transactions on electron devices (01.11.1985)
Published in IEEE transactions on electron devices (01.11.1985)
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Journal Article
A low-gate-leakage-current GaAs MESFET with a thin epitaxial silicon layer
Costa, J.C., Miller, T.J., Abid, Z., Williamson, F., Bernhardt, B.A., Nathan, M.I.
Published in IEEE electron device letters (01.06.1991)
Published in IEEE electron device letters (01.06.1991)
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Journal Article
Excess current in n+GaAs-AlxGa1-xAs-nGaAs heterojunctions
LU, S. S, LEE, K. R, LEE, K. H, NATHAN, M. I, HEIBLUM, M, WRIGHT, S. L
Published in Surface science (01.04.1990)
Published in Surface science (01.04.1990)
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Conference Proceeding
Journal Article
IVA-6 characteristics of AuGeNi ohmic contacts to GaAs
Heiblum, M., Nathan, M.I., Chang, C.A.
Published in IEEE transactions on electron devices (01.10.1981)
Published in IEEE transactions on electron devices (01.10.1981)
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Journal Article