Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate
Niranjan, S, Muralidharan, R., Sen, Prosenjit, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.08.2022)
Published in IEEE transactions on electron devices (01.08.2022)
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Journal Article
Optically excited artificial synapse based on α-In2Se3 FETs on Ta2O5
Mohta, Neha, Rao, Ankit, Suri, Priyanka, Nath, Digbijoy N
Published in Semiconductor science and technology (01.09.2023)
Published in Semiconductor science and technology (01.09.2023)
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Journal Article
Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability
Bhattacharjee, Shubhadeep, Ganapathi, Kolla Lakshmi, Nath, Digbijoy N., Bhat, Navakanta
Published in IEEE transactions on electron devices (01.06.2016)
Published in IEEE transactions on electron devices (01.06.2016)
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Journal Article
Study of TaN-Gated p-GaN E-Mode HEMT
Baby, Rijo, Reshma, K., Chandrasekar, Hareesh, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon
Niranjan, S., Rao, Ankit, Muralidharan, R., Sen, Prosenjit, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.03.2022)
Published in IEEE transactions on electron devices (01.03.2022)
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Journal Article
Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs
Ting-Hsiang Hung, Pil Sung Park, Krishnamoorthy, Sriram, Nath, Digbijoy N., Rajan, Siddharth
Published in IEEE electron device letters (01.03.2014)
Published in IEEE electron device letters (01.03.2014)
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Journal Article
Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications
Gowrisankar, Aniruddhan, Charan, Vanjari Sai, Chandrasekar, Hareesh, Venugopalarao, Anirudh, Muralidharan, R., Raghavan, Srinivasan, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition
Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R, Nath, Digbijoy N
Published in RSC advances (10.11.2021)
Published in RSC advances (10.11.2021)
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Journal Article
Fabrication and Switching Performance of 8 A–500 V D‐Mode GaN MISHEMTs
Baby, Rijo, Roy, Shamibrota K., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Basu, Kaushik, Raghavan, Srinivasan, Nath, Digbijoy N.
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
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Journal Article
Optical properties of mist CVD grown α-Ga2O3
Muazzam, Usman Ul, Chavan, Prasad, Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N
Published in IEEE photonics technology letters (01.04.2020)
Published in IEEE photonics technology letters (01.04.2020)
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Journal Article
An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition
Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R, Nath, Digbijoy N
Published in RSC advances (17.11.2021)
Published in RSC advances (17.11.2021)
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Journal Article