Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications
Glaser, J S, Nasadoski, J J, Losee, P A, Kashyap, A S, Matocha, K S, Garrett, J L, Stevanovic, L D
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)
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Conference Proceeding
3.3kV SiC MOSFETs designed for low on-resistance and fast switching
Bolotnikov, A., Losee, P., Matocha, K., Glaser, J., Nasadoski, J., Lei Wang, Elasser, A., Arthur, S., Stum, Z., Sandvik, P., Sui, Y., Johnson, T., Sabate, J., Stevanovic, L.
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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Conference Proceeding
A 900W, 300V to 50V Dc-dc Power Converter with a 30MHz Switching Frequency
Glaser, J.S., Nasadoski, J., Heinrich, R.
Published in 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition (01.02.2009)
Published in 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition (01.02.2009)
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Conference Proceeding
DC and Transient Performance of 4H-SiC Double-Implant MOSFETs
Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, Stevanovic, Ljubisa
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications
Das, M. K., Capell, C., Grider, D. E., Raju, R., Schutten, M., Nasadoski, J., Leslie, S., Ostop, J., Hefner, A.
Published in 2011 IEEE Energy Conversion Congress and Exposition (01.09.2011)
Published in 2011 IEEE Energy Conversion Congress and Exposition (01.09.2011)
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Conference Proceeding
Recent advances in silicon carbide MOSFET power devices
Stevanovic, L.D., Matocha, K.S., Losee, P.A., Glaser, J.S., Nasadoski, J.J., Arthur, S.D.
Published in 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.02.2010)
Published in 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.02.2010)
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Conference Proceeding
High frequency EMI filter parasitic characterization
Schutten, M., Prabhakaran, S., Karipides, D., Nasadoski, J., Thomas, R.
Published in 2011 IEEE Vehicle Power and Propulsion Conference (01.09.2011)
Published in 2011 IEEE Vehicle Power and Propulsion Conference (01.09.2011)
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Conference Proceeding
Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules
Elasser, A., Agamy, M., Nasadoski, J., Bolotnikov, A., Stum, Z., Raju, R., Stevanovic, L., Mari, J., Menzel, M., Bastien, B., Losee, P.
Published in 2012 IEEE Energy Conversion Congress and Exposition (ECCE) (01.09.2012)
Published in 2012 IEEE Energy Conversion Congress and Exposition (ECCE) (01.09.2012)
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Conference Proceeding
Getting the most from SiC MOSFETs: Optimizing conduction and switching losses for high performance power electronics applications
Matocha, K., Losee, P., Glaser, J., Nasadoski, J., Arthur, S., Stevanovic, L.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding
Optically powered drive circuit and method for controlling a semiconductor switch
KOSTE GLEN P, STEIGERWALD ROBERT L, NASADOSKI JEFFREY J, SCHUTTEN MICHAEL J
Year of Publication 17.05.2007
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Year of Publication 17.05.2007
Patent