The 2018 GaN power electronics roadmap
Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hu, Jie, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, Stephen, Palacios, Tomás, Piedra, Daniel, Plissonnier, M, Reddy, R, Sun, Min, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Zhang, Yuhao
Published in Journal of physics. D, Applied physics (25.04.2018)
Published in Journal of physics. D, Applied physics (25.04.2018)
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Journal Article
Case Studies of Musculoskeletal-Simulation-Based Rehabilitation Program Evaluation
Leng-Feng Lee, Narayanan, M.S., Kannan, S., Mendel, F., Krovi, V.N.
Published in IEEE transactions on robotics (01.06.2009)
Published in IEEE transactions on robotics (01.06.2009)
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Journal Article
A Novel Approach to Suppress the Collector-Induced Barrier Lowering Effect in Narrow Mesa IGBTs
Luo, Peng, Long, Hong Yao, Narayanan, E. M. S.
Published in IEEE electron device letters (01.09.2018)
Published in IEEE electron device letters (01.09.2018)
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Journal Article
A bi-prism interferometer for hard X-ray photons
Isakovic, A. F., Stein, A., Warren, J. B., Sandy, A. R., Narayanan, S., Sprung, M., Ablett, J. M., Siddons, D. P., Metzler, M., Evans-Lutterodt, K.
Published in Journal of synchrotron radiation (01.07.2010)
Published in Journal of synchrotron radiation (01.07.2010)
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Journal Article
Low cost high voltage GaN polarization superjunction field effect transistors
Kawai, H., Yagi, S., Hirata, S., Nakamura, F., Saito, T., Kamiyama, Y., Yamamoto, M., Amano, H., Unni, V., Narayanan, E. M. S.
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
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Journal Article
Evaluation of gate drive circuit effect in cascode GaN-based applications
Tan, Q Y, Narayanan, E M S
Published in Bulletin of the Polish Academy of Sciences. Technical sciences (01.04.2021)
Published in Bulletin of the Polish Academy of Sciences. Technical sciences (01.04.2021)
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Journal Article
Crosstalk in monolithic GaN-on-Silicon power electronic devices
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Journal Article
Conference Proceeding
Reliability study and modelling of IGBT press-pack power modules
Long, Hong Y., Sweet, Mark R., Narayanan, E. M. S., Gangru Li
Published in 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2017)
Published in 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2017)
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Conference Proceeding
Virtual musculoskeletal scenario-testing case-studies
Narayanan, M.S., Kannan, S., Leng-Feng Lee, Mendel, F., Krovi, V.N.
Published in 2008 Virtual Rehabilitation (01.08.2008)
Published in 2008 Virtual Rehabilitation (01.08.2008)
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Conference Proceeding
Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET)
Udrea, F., Udugampola, U.N.K., Sheng, K., McMahon, R.A., Amaratunga, G.A.J., Narayanan, E.M.S., De Souza, M.M., Hardikar, S.
Published in IEEE electron device letters (01.12.2002)
Published in IEEE electron device letters (01.12.2002)
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Journal Article
Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch
Peng Luo, Hong Yao Long, Sweet, Mark R., De Souza, M. M., Narayanan, E. M. S.
Published in 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE) (01.06.2017)
Published in 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE) (01.06.2017)
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Conference Proceeding
Turn-on characteristics of polycrystalline silicon TFT's-impact of hydrogenation and channel length
Xu, Y.Z., Clough, F.J., Narayanan, E.M.S., Chen, Y., Milne, W.I.
Published in IEEE electron device letters (01.02.1999)
Published in IEEE electron device letters (01.02.1999)
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Journal Article