Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation
Jin, Soo‐Min, Kang, Shin‐Young, Kim, Hea‐Jee, Lee, Ju‐Young, Nam, In‐Ho, Shim, Tae‐Hun, Song, Yun‐Heub, Park, Jea‐Gun
Published in Electronics letters (01.01.2022)
Published in Electronics letters (01.01.2022)
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Journal Article
Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation
Sim, Jae-Min, Kim, Bong-Seok, Nam, In-Ho, Song, Yun-Heub
Published in Electronics (Basel) (01.08.2021)
Published in Electronics (Basel) (01.08.2021)
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Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing
Kang, Shin-young, Jin, Soo-min, Lee, Ju-young, Woo, Dae-seong, Shim, Tae-hun, Nam, In-ho, Park, Jea-gun, Sutou, Yuji, Song, Yun-heub
Published in Electronics (Basel) (04.11.2021)
Published in Electronics (Basel) (04.11.2021)
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Journal Article
Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors
Nam, In-Ho, Sim, Jae Sung, Hong, Sung In, Park, Byung-Gook, Lee, Jong Duk, Lee, Seung-Woo, Kang, Man-Sug, Kim, Young-Wug, Suh, Kwang-Pyuk, Lee, Won Seong
Published in IEEE transactions on electron devices (01.10.2001)
Published in IEEE transactions on electron devices (01.10.2001)
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Journal Article
Sputter‐grown GeTe/Sb 2 Te 3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation
Jin, Soo‐Min, Kang, Shin‐Young, Kim, Hea‐Jee, Lee, Ju‐Young, Nam, In‐Ho, Shim, Tae‐Hun, Song, Yun‐Heub, Park, Jea‐Gun
Published in Electronics letters (01.01.2022)
Published in Electronics letters (01.01.2022)
Get full text
Journal Article