Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Kim, Changsik, Moon, Inyong, Lee, Daeyeong, Choi, Min Sup, Ahmed, Faisal, Nam, Seunggeol, Cho, Yeonchoo, Shin, Hyeon-Jin, Park, Seongjun, Yoo, Won Jong
Published in ACS nano (28.02.2017)
Published in ACS nano (28.02.2017)
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Journal Article
Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing
Moon, Taehwan, Lee, Hyun Jae, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yun Seong, Park, Yoonsang, Yang, J Joshua, Heo, Jinseong
Published in Neuromorphic computing and engineering (01.06.2023)
Published in Neuromorphic computing and engineering (01.06.2023)
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Journal Article
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
Cheema, Suraj S., Shanker, Nirmaan, Wang, Li-Chen, Hsu, Cheng-Hsiang, Hsu, Shang-Lin, Liao, Yu-Hung, San Jose, Matthew, Gomez, Jorge, Chakraborty, Wriddhi, Li, Wenshen, Bae, Jong-Ho, Volkman, Steve K., Kwon, Daewoong, Rho, Yoonsoo, Pinelli, Gianni, Rastogi, Ravi, Pipitone, Dominick, Stull, Corey, Cook, Matthew, Tyrrell, Brian, Stoica, Vladimir A., Zhang, Zhan, Freeland, John W., Tassone, Christopher J., Mehta, Apurva, Saheli, Ghazal, Thompson, David, Suh, Dong Ik, Koo, Won-Tae, Nam, Kab-Jin, Jung, Dong Jin, Song, Woo-Bin, Lin, Chung-Hsun, Nam, Seunggeol, Heo, Jinseong, Parihar, Narendra, Grigoropoulos, Costas P., Shafer, Padraic, Fay, Patrick, Ramesh, Ramamoorthy, Mahapatra, Souvik, Ciston, Jim, Datta, Suman, Mohamed, Mohamed, Hu, Chenming, Salahuddin, Sayeef
Published in Nature (London) (07.04.2022)
Published in Nature (London) (07.04.2022)
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Journal Article
Laminated Ferroelectric FET With Large Memory Window and High Reliability
Lee, Hyun Jae, Nam, Seunggeol, Lee, Yunseong, Kim, Kihong, Choe, Duk-Hyun, Yoo, Sijung, Park, Yoonsang, Jo, Sanghyun, Kim, Donghoon, Heo, Jinseong
Published in IEEE transactions on electron devices (01.04.2024)
Published in IEEE transactions on electron devices (01.04.2024)
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Journal Article
Interfacial Layer Selection Methodology for Customized Ferroelectric Memories
Lee, Hyun Jae, Moon, Taehwan, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yunseong, Park, Yoonsang, Kim, Kihong, Heo, Jinseong
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition
Heo, Jinseong, Jeong, Heejeong, Cho, Yeonchoo, Lee, Jaeho, Lee, Kiyoung, Nam, Seunggeol, Lee, Eun-Kyu, Lee, Sangyeob, Lee, Hyangsook, Hwang, Sungwoo, Park, Seongjun
Published in Nano letters (09.11.2016)
Published in Nano letters (09.11.2016)
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Journal Article
Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts
Lee, Min-Hyun, Cho, Yeonchoo, Byun, Kyung-Eun, Shin, Keun Wook, Nam, Seong-Geol, Kim, Changhyun, Kim, Haeryong, Han, Sang-A, Kim, Sang-Woo, Shin, Hyeon-Jin, Park, Seongjun
Published in Nano letters (08.08.2018)
Published in Nano letters (08.08.2018)
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Journal Article
Ultrathin ferroic HfO 2 -ZrO 2 superlattice gate stack for advanced transistors
Cheema, Suraj S, Shanker, Nirmaan, Wang, Li-Chen, Hsu, Cheng-Hsiang, Hsu, Shang-Lin, Liao, Yu-Hung, San Jose, Matthew, Gomez, Jorge, Chakraborty, Wriddhi, Li, Wenshen, Bae, Jong-Ho, Volkman, Steve K, Kwon, Daewoong, Rho, Yoonsoo, Pinelli, Gianni, Rastogi, Ravi, Pipitone, Dominick, Stull, Corey, Cook, Matthew, Tyrrell, Brian, Stoica, Vladimir A, Zhang, Zhan, Freeland, John W, Tassone, Christopher J, Mehta, Apurva, Saheli, Ghazal, Thompson, David, Suh, Dong Ik, Koo, Won-Tae, Nam, Kab-Jin, Jung, Dong Jin, Song, Woo-Bin, Lin, Chung-Hsun, Nam, Seunggeol, Heo, Jinseong, Parihar, Narendra, Grigoropoulos, Costas P, Shafer, Padraic, Fay, Patrick, Ramesh, Ramamoorthy, Mahapatra, Souvik, Ciston, Jim, Datta, Suman, Mohamed, Mohamed, Hu, Chenming, Salahuddin, Sayeef
Published in Nature (London) (01.04.2022)
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Published in Nature (London) (01.04.2022)
Journal Article
SEMICONDUCTOR ELEMENT INCLUDING METAL-TWO DIMENSIONAL MATERIAL-SEMICONDUCTOR CONTACT
SHIN HYEON-JIN, NAM SEUNGGEOL, LEE MINHYUN, KIM HAERYONG, PARK SEONG-JUN
Year of Publication 22.12.2016
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Year of Publication 22.12.2016
Patent
Content-addressable memory and electronic device including the same
Choe, Dukhyun, Lee, Hyunjae, Bae, Hagyoul, Nam, Seunggeol, Heo, Jinseong
Year of Publication 15.10.2024
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Year of Publication 15.10.2024
Patent
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER
HEO, Jinseong, LEE, Hyunjae, LEE, Yunseong, CHOE, Dukhyun, NAM, Seunggeol
Year of Publication 18.07.2024
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Year of Publication 18.07.2024
Patent
Semiconductor device including metal-2 dimensional material-semiconductor contact
Lee, Minhyun, Nam, Seunggeol, Kim, Haeryong, Park, Seongjun, Shin, Hyeonjin
Year of Publication 16.07.2024
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Year of Publication 16.07.2024
Patent