FIELD-EFFECT TRANSITORS (FET) CIRCUITS EMPLOYING TOPSIDE AND BACKSIDE CONTACTS FOR TOPSIDE AND BACKSIDE ROUTING OF FET POWER AND LOGIC SIGNALS, AND RELATED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) CIRCUITS
VANG, Foua, RIM, Kern, SHARMA, Deepak, KANG, Seung Hyuk, NALLAPATI, Giridhar, KIM, Jonghae, LIM, Hyeokjin, CHAVA, Bharani, SONG, Stanley Seungchul, FENG, Peijie, BOYNAPALLI, Venugopal, CHIDAMBARAM, Periannan
Year of Publication 26.07.2023
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Year of Publication 26.07.2023
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Year of Publication 23.06.2021
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Year of Publication 23.06.2021
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Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits
Lim, Hyeokjin, Nallapati, Giridhar, Chava, Bharani, Rim, Kern, Kang, Seung Hyuk, Song, Stanley Seungchul, Vang, Foua, Boynapalli, Venugopal, Sharma, Deepak, Feng, Peijie, Kim, Jonghae, Chidambaram, Periannan
Year of Publication 06.09.2022
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Year of Publication 06.09.2022
Patent
FIELD-EFFECT TRANSISTORS (FET) CIRCUITS EMPLOYING TOPSIDE AND BACKSIDE CONTACTS FOR TOPSIDE AND BACKSIDE ROUTING OF FET POWER AND LOGIC SIGNALS, AND RELATED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) CIRCUITS
VANG, Foua, RIM, Kern, SHARMA, Deepak, KANG, Seung Hyuk, NALLAPATI, Giridhar, KIM, Jonghae, LIM, Hyeokjin, CHAVA, Bharani, SONG, Stanley Seungchul, FENG, Peijie, BOYNAPALLI, Venugopal, CHIDAMBARAM, Periannan
Year of Publication 24.03.2022
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Year of Publication 24.03.2022
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FIELD-EFFECT TRANSITORS (FET) CIRCUITS EMPLOYING TOPSIDE AND BACKSIDE CONTACTS FOR TOPSIDE AND BACKSIDE ROUTING OF FET POWER AND LOGIC SIGNALS, AND RELATED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) CIRCUITS
VANG, Foua, RIM, Kern, SHARMA, Deepak, KANG, Seung Hyuk, NALLAPATI, Giridhar, KIM, Jonghae, LIM, Hyeokjin, CHAVA, Bharani, SONG, Stanley Seungchul, FENG, Peijie, BOYNAPALLI, Venugopal, CHIDAMBARAM, Periannan
Year of Publication 24.03.2022
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Year of Publication 24.03.2022
Patent