Comparison of transformation to low-resistivity phase and agglomeration of TiSi2 and CoSi2
LASKY, J. B, NAKOS, J. S, CAIN, O. J, GEISS, P. J
Published in IEEE transactions on electron devices (01.02.1991)
Published in IEEE transactions on electron devices (01.02.1991)
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Journal Article
Department of energy’s annealing prototype demonstration projects
Warren, J.W, Harrison, D.L, Agarwal, D.C, Rochau, G.E, Nakos, J.T, Kelly, J.E
Published in Nuclear engineering and design (01.11.1999)
Published in Nuclear engineering and design (01.11.1999)
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Journal Article
Improved detection of genetic markers of antimicrobial resistance by hybridization probe-based melting curve analysis using primers to mask proximal mutations: examples include the influenza H275Y substitution
WHILEY, David M, JACOB, Kevin, NAKOS, Jennifer, BLETCHLY, Cheryl, NIMMO, Graeme R, NISSEN, Michael D, SLOOTS, Theo P
Published in Journal of antimicrobial chemotherapy (01.06.2012)
Published in Journal of antimicrobial chemotherapy (01.06.2012)
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Journal Article
Manufacturability comparison of thin oxynitride films
Preuss, H., Nakos, J., Adams, E., Burnham, J.
Published in 2005 13th International Conference on Advanced Thermal Processing of Semiconductors (2005)
Published in 2005 13th International Conference on Advanced Thermal Processing of Semiconductors (2005)
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Conference Proceeding
Simple, fast, 2.5-V CMOS logic with 0.25- mu m channel lengths and damascene interconnect
Koburger, C, Adkisson, J, Clark, W, Davari, B, Geissler, S, Givens, J, Hansen, H, Holmes, S, Lee, H K, Lee, J, Luce, S, Martin, D, Mittl, S, Nakos, J, Stiffler, S
Published in Digest of technical papers - Symposium on VLSI Technology (01.01.1994)
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Published in Digest of technical papers - Symposium on VLSI Technology (01.01.1994)
Journal Article
Semiconductor process and structural optimization of shallow trench isolation-defined and polysilicon-bound source/drain diodes for ESD networks
Voldman, S., Geissler, S., Nakos, J., Pekarik, J., Gauthier, R.
Published in Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347) (1998)
Published in Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347) (1998)
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Conference Proceeding
Selective nitridation of gate oxides
BURNHAM JAY S.,ELLIS-MONAGHAN JOHN J.,NAKOS JAMESS.,QUINLIVAN JAMES J
Year of Publication 28.02.2007
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Year of Publication 28.02.2007
Patent
Department of energy's annealing prototype demonstration projects
Warren, J W, Harrison, D L, Agarwal, D C, Rochau, G E, Nakos, J T, Kelly, J E
Published in Nuclear engineering and design (21.10.1996)
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Published in Nuclear engineering and design (21.10.1996)
Journal Article
Comparison of transformation to low-resistivity phase andagglomeration of TiSi(2) and CoSi(2)
Lasky, J B, Nakos, J S, Cain, O J, Geiss, P J
Published in IEEE transactions on electron devices (01.02.1991)
Published in IEEE transactions on electron devices (01.02.1991)
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Journal Article
Comparison of transformation to low-resistivity phase and agglomeration of TiSi sub(2) and CoSi sub(2)
Lasky, J B, Nakos, J S, Cain, O J, Geiss, P J
Published in IEEE transactions on electron devices (01.01.1991)
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Published in IEEE transactions on electron devices (01.01.1991)
Journal Article
High performance CMOS devices on SOI for 90 nm technology enhanced by RSD (raised source/drain) and thermal cycle/spacer engineering
Park, H., Clark, W., Mocuta, A.C., Holt, J., Mo, R., Sato, T., Mocuta, D., Lee, B.H., Dokumaci, O., O'Neil, P., Brown, D., Rausch, W., Suenaga, J., Li, Y., Brown, L., Nakos, J., Hathorn, K., Ronsheim, P., Kimura, H., Doris, B., Sudo, G., Scheer, K., Utomo, H., Mittl, S., Wagner, T., Umebayashi, T., Tsukamoto, M., Kohyama, Y., Cheek, J., Yang, I., Kuroda, H., Toyoshima, Y., Pellerin, J., Matsumoto, K., Schepis, D., Agnello, P., Welser, J., Nii, H., Kawanaka, S., Fisher, P., Oh, S.-H., Snare, J.
Published in IEEE International Electron Devices Meeting 2003 (2003)
Published in IEEE International Electron Devices Meeting 2003 (2003)
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Conference Proceeding
Simple, fast, 2.5-V CMOS logic with 0.25-/spl mu/m channel lengths and damascene interconnect
Koburger, C., Adkisson, J., Clark, W., Davari, B., Geissler, S., Givens, J., Hansen, H., Holmes, S., Lee, H.K., Lee, J., Luce, S., Martin, D., Mittl, S., Nakos, J., Stiffler, S.
Published in Proceedings of 1994 VLSI Technology Symposium (1994)
Published in Proceedings of 1994 VLSI Technology Symposium (1994)
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Conference Proceeding
Gate dielectric integrity and reliability in 0.5- mu m CMOS technology
Strong, A.W., Stamper, A.K., Bolam, R.J., Furukawa, T., Gow, C.J., Gow, T.R., Martin, D.W., Mittl, S.W., Nakos, J.S., Pennington, S.L.
Published in 31st Annual Proceedings Reliability Physics 1993 (1993)
Published in 31st Annual Proceedings Reliability Physics 1993 (1993)
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Conference Proceeding