Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells
Murotani, Hideaki, Nakatsuru, Keigo, Kurai, Satoshi, Okada, Narihito, Yano, Yoshiki, Koseki, Shuichi, Piao, Guanxi, Yamada, Yoichi
Published in Japanese Journal of Applied Physics (01.03.2023)
Published in Japanese Journal of Applied Physics (01.03.2023)
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