Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET
Tanaka, Rina, Fujiwara, Nobuo, Nakata, Shuhei, Sugawara, Katsutoshi, Fukui, Yutaka, Yamakawa, Satoshi, Kagawa, Yasuhiro, Imaizumi, Masayuki, Miura, Naruhisa
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes
Konishi, Kazuya, Nakata, Shuhei, Nakaki, Yoshiyuki, Nakao, Yukiyasu, Nagae, Akemi, Tanaka, Takanori, Nakamura, Yu, Toyoda, Yoshihiko, Sumitani, Hiroaki, Oomori, Tatsuo
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy
Hasegawa, Junichi, Noguchi, Munetaka, Furuhashi, Masayuki, Nakata, Shuhei, Iwasaki, Takayuki, Kodera, Tetsuo, Nishimura, Tadashi, Hatano, Mutsuko
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter
Hamada, Kenji, Hino, Shiro, Miura, Naruhisa, Watanabe, Hiroshi, Nakata, Shuhei, Suekawa, Eisuke, Ebiike, Yuji, Imaizumi, Masayuki, Umezaki, Isao, Yamakawa, Satoshi
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Body Potential Control via p-Type Contact Resistance and Its Influence on Switching Characteristics of 4H-SiC MOSFETs
Tominaga, Takaaki, Iwamatsu, Toshiaki, Nakao, Yukiyasu, Amishiro, Hiroyuki, Watanabe, Hiroshi, Tomohisa, Shingo, Miura, Naruhisa, Nakata, Shuhei
Published in IEEE transactions on electron devices (01.01.2022)
Published in IEEE transactions on electron devices (01.01.2022)
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Journal Article
Inrush Current Effects on SiC-MOSFETs for LLC Converter
Tanaka, Hikaru, Takaku, Yoshimasa, Takada, Yosei, Nakata, Shuhei
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs
Nakata, Shuhei, Iwamatsu, Toshiaki, Amishiro, Hiroyuki, Yamakawa, Satoshi, Tominaga, Takaaki, Watanabe, Hiroshi, Nakao, Yukiyasu, Miura, Naruhisa
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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Journal Article
Influence of recovery characteristics on switching behavior of SiC MOSFETs
Tominaga, Takaaki, Iwamatsu, Toshiaki, Nakao, Yukiyasu, Amishiro, Hiroyuki, Watanabe, Hiroshi, Miura, Naruhisa, Yamakawa, Satoshi, Nakata, Shuhei
Published in Japanese Journal of Applied Physics (01.08.2020)
Published in Japanese Journal of Applied Physics (01.08.2020)
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Journal Article
Demonstration of SiC-MOSFET embedding Schottky barrier diode for inactivation of parasitic body diode
Hino, S., Hatta, H., Sadamatsu, K., Nagahisa, Y., Yamamoto, S., Iwamatsu, T., Yamamoto, Y., Imaizumi, M., Nakata, S., Yamakawa, S.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module
Kawahara, Koutarou, Hino, Shiro, Sadamatsu, Koji, Nakao, Yukiyasu, Yamashiro, Yusuke, Yamamoto, Yasuki, Iwamatsu, Toshiaki, Nakata, Shuhei, Tomohisa, Shingo, Yamakawa, Satoshi
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
The effect of incomplete ionization on SiC devices during high speed switching
Ebihara, Kohei, Kawahara, Kotaro, Watanabe, Hiroshi, Nakata, Shuhei, Yamakawa, Satoshi
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article