High-density layer at the SiO2/Si interface observed by difference X-ray reflectivity
AWAJI, N, OHKUBO, S, NAKANISHI, T, SUGITA, Y, TAKASAKI, K, KOMIYA, S
Published in Japanese journal of applied physics (1996)
Published in Japanese journal of applied physics (1996)
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Journal Article
Structural relaxation of SiO2/Si interfacial layer during annealing
Awaji, Naoki, Ohkubo, Satoshi, Nakanishi, Toshiro, Takasaki, Kanetake, Komiya, Satoshi
Published in Applied surface science (01.06.1997)
Published in Applied surface science (01.06.1997)
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Journal Article
Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation
Sugizaki, Taro, Murakoshi, Atsushi, Katsumata, Ryota, Kojima, Manabu, Tanaka, Tetsu, Nakanishi, Toshiro, Nara, Yasuo
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
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Journal Article
High-accuracy X-ray reflectivity study of native oxide formed in chemical treatment
AWAJI, N, SUGITA, Y, OHKUBO, S, NAKANISHI, T, TAKASAKI, K, KOMIYA, S
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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Journal Article
Investigation of hot carrier degradation in bulk FinFET
Eun-Ae Chung, Kab-Jin Nam, Nakanishi, Toshiro, Sungil Park, Hongseon Yang, Kauerauf, Thomas, Guangfan Jiao, Dong-won Kim, Ki Hyun Hwang, Hyejin Kim, Hyunwoo Lee, Sangwoo Pae
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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