A 0.5-mu m very-high-speed silicon bipolar devices technologyU-groove-isolated SICOS
Shiba, T, Tamaki, Y, Kure, T, Kobayashi, T, Nakaminra, T
Published in IEEE transactions on electron devices (01.11.1991)
Published in IEEE transactions on electron devices (01.11.1991)
Get full text
Journal Article
A 0.5- mu m very-high-speed silicon bipolar devices technology U-groove-isolated SICOS
Shiba, T., Tamaki, Y., Kure, T., Kobayashi, T., Nakaminra, T.
Published in IEEE transactions on electron devices (01.11.1991)
Published in IEEE transactions on electron devices (01.11.1991)
Get full text
Journal Article