Search Results - "Nakakubo, A." :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Proposal of a partial-ground-plane (PGP) silicon-on-insulator (SOI) MOSFET for deep sub-0.1-μm channel regime

Proposal of a partial-ground-plane (PGP) silicon-on-insulator (SOI) MOSFET for deep sub-0.1-μm channel regime

by Yanagi, S., Nakakubo, A., Omura, Y.
Published in IEEE electron device letters (01.06.2001)

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Journal Article

Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed

Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed

by Saito, Hitoshi, Watanabe, J., Seino, J., Tamura, T., Sashida, N., Hara, K., Kawabata, K., Fujii, A., Ohno, J., Nakakubo, A., Kojima, M., Shimoyama, T., Wada, H., Cleveland, L., Luan, H., Sen, R., Leong, N., Gallagher, T., Rueckes, T.
Published in 2021 IEEE International Memory Workshop (IMW) (01.05.2021)

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Conference Proceeding

PARTIAL-GROUND-PLANE (PGP) SILICON-ON-INSULATOR (SOI) METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) FOR DEEP SUB-0.1-mu m CHANNEL REGIME

PARTIAL-GROUND-PLANE (PGP) SILICON-ON-INSULATOR (SOI) METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) FOR DEEP SUB-0.1-mu m CHANNEL REGIME

by Yanagi, S, Nakakubo, A, Omura, Y
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 4B, pp. 2887-2890. 2001 (2001)

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Journal Article

Threshold voltage of sub-10-nm-thick SOI MOSFET's at cryogenic temperature and quantum effects

Threshold voltage of sub-10-nm-thick SOI MOSFET's at cryogenic temperature and quantum effects

by Omura, Y., Nakakubo, A., Nakatsuji, H.
Published in 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) (2004)

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Conference Proceeding

Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs

Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs

by Omura, Yasuhisa, Nakakubo, Atsushi, Nakatsuji, Hiroshi
Published in Solid-state electronics (01.09.2004)

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Journal Article

Proposal of a partial-ground-plane (PGP) silicon-on-insulator (SOI) MOSFET for deep sub-0.1-[micro]m channel regime

Proposal of a partial-ground-plane (PGP) silicon-on-insulator (SOI) MOSFET for deep sub-0.1-[micro]m channel regime

by Yanagi, S, Nakakubo, A, Omura, Y
Published in IEEE electron device letters (01.06.2001)

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Journal Article

Proposal of sub 0.1 /spl mu/m SOI MOSFET structure (partial-ground-plane SOI MOSFET) for RF/digital applications

Proposal of sub 0.1 /spl mu/m SOI MOSFET structure (partial-ground-plane SOI MOSFET) for RF/digital applications

by Nakakubo, A., Yanagi, S.-I., Omura, Y.
Published in 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) (2000)

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Conference Proceeding

Thermal printing head and thermal printer

Thermal printing head and thermal printer

by NAKAKUBO, KAZUYA
Year of Publication 01.12.2023

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Patent

Thermal printing head and manufacturing method thereof

Thermal printing head and manufacturing method thereof

by NAKAKUBO, KAZUYA
Year of Publication 08.07.2022

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Patent

Thermal printhead and method for manufacturing thermal printhead

Thermal printhead and method for manufacturing thermal printhead

by ARITAKI YASUYUKI, NAKAKUBO, KAZUYA
Year of Publication 28.06.2024

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Patent

Thermal printing head, thermal printer and manufacturing method of thermal printing head

Thermal printing head, thermal printer and manufacturing method of thermal printing head

by NAKAKUBO KAZUYA, ARITAKI YASUYUKI
Year of Publication 11.08.2023

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Patent

LIQUID EJECTION HEAD

LIQUID EJECTION HEAD

by NAKAKUBO TORU
Year of Publication 29.10.2019

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Patent

METHOD FOR MANUFACTURING STEEL SHEET

METHOD FOR MANUFACTURING STEEL SHEET

by MAEKAWA SHUYA, OTOMO RYOSUKE, NAKAKUBO SHOHEI
Year of Publication 24.11.2023

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Patent

LIQUID EJECTION HEAD AND MANUFACTURING METHOD OF LIQUID EJECTION HEAD

LIQUID EJECTION HEAD AND MANUFACTURING METHOD OF LIQUID EJECTION HEAD

by NAKAMURA YOHEI, NAKAKUBO TORU
Year of Publication 15.11.2019

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Patent

Thermal printing head

Thermal printing head

by WATANABE TOSHIO, ARITAKI YASUYUKI, NAKAKUBO, KAZUYA, OTANI TAKAMICHI
Year of Publication 27.08.2024

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Patent

TWI776377B

TWI776377B

by NAKAKUBO, YOSHINORI, KOBAYASHI, SHIGEKI, NONAKA, YASUTAKA
Year of Publication 01.09.2022

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Patent

Semiconductor memory device and manufacturing method thereof wherein the semiconductor memory device includes a bit line; a capacitor; a first memory cell transistor and a second memory cell transistor

Semiconductor memory device and manufacturing method thereof wherein the semiconductor memory device includes a bit line; a capacitor; a first memory cell transistor and a second memory cell transistor

by NAKAKUBO, YOSHINORI, KOBAYASHI, SHIGEKI, NONAKA, YASUTAKA
Year of Publication 01.08.2022

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Patent

SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE

SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE

by KOBAYASHI SHIGEKI, NAKAKUBO YOSHINORI, NONAKA YASUTAKA
Year of Publication 09.11.2021

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Patent

Deflecting electrode, droplet ejection head, and droplet ejection apparatus

Deflecting electrode, droplet ejection head, and droplet ejection apparatus

by NAKAKUBO TORU
Year of Publication 09.07.2014

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Patent

Thermal printhead and method for manufacturing thermal printhead

Thermal printhead and method for manufacturing thermal printhead

by FUJITA AKIRA, FUWA YASUHIRO, NAKAKUBO, KAZUYA, NAKATANI GORO
Year of Publication 02.09.2022

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Patent

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