Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates
Najmi, Mohammed A., Kirilenko, Pavel, Iida, Daisuke, Ohkawa, Kazuhiro
Published in Scientific reports (07.11.2023)
Published in Scientific reports (07.11.2023)
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Journal Article
High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates
Kirilenko, Pavel, Najmi, Mohammed A., Ma, Bei, Shushanian, Artem, Velazquez-Rizo, Martin, Iida, Daisuke, Ohkawa, Kazuhiro
Published in AIP advances (01.04.2023)
Published in AIP advances (01.04.2023)
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Journal Article
Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2
Iida, Daisuke, Kirilenko, Pavel, Velazquez-Rizo, Martin, Zhuang, Zhe, Najmi, Mohammed A., Ohkawa, Kazuhiro
Published in AIP advances (01.06.2022)
Published in AIP advances (01.06.2022)
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Journal Article
Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition
Almalawi, Dhaifallah, Lopatin, Sergei, Edwards, Paul R., Xin, Bin, Subedi, Ram C., Najmi, Mohammed A., Alreshidi, Fatimah, Genovese, Alessandro, Iida, Daisuke, Wehbe, Nimer, Ooi, Boon S., Ohkawa, Kazuhiro, Martin, Robert W., Roqan, Iman S.
Published in ACS omega (12.12.2023)
Published in ACS omega (12.12.2023)
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Journal Article
(10 1¯ 3)-oriented semipolar GaN growth on (10 1¯ 0) m-plane ScAlMgO4 substrate
Najmi, Mohammed A., Iida, Daisuke, Ohkawa, Kazuhiro
Published in Japanese Journal of Applied Physics (01.10.2024)
Published in Japanese Journal of Applied Physics (01.10.2024)
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Journal Article
Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate
Velazquez-Rizo, Martin, Najmi, Mohammed A., Iida, Daisuke, Kirilenko, Pavel, Ohkawa, Kazuhiro
Published in Applied physics express (17.05.2022)
Published in Applied physics express (17.05.2022)
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Journal Article
(10 1 ¯ 3)-oriented semipolar GaN growth on (10 1 ¯ 0) m-plane ScAlMgO 4 substrate
Najmi, Mohammed A., Iida, Daisuke, Ohkawa, Kazuhiro
Published in Japanese Journal of Applied Physics (01.10.2024)
Published in Japanese Journal of Applied Physics (01.10.2024)
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Journal Article
Red light-emitting diode with full InGaN structure on ScAlMgO 4 substrate
Najmi, Mohammed A., Jalmood, Rawan S., Kotov, Ivan, Altinkaya, Cesur, Takeuchi, Wakana, Iida, Daisuke, Ohkawa, Kazuhiro
Published in Applied physics express (05.11.2024)
Published in Applied physics express (05.11.2024)
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Journal Article
Erratum: “Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A 1 (LO) and E 2 (high) Phonons in a GaInN/GaN Heterostructure” [Physica Status Solidi B, 2024, 2400057]
Khaing Shwe, Thee Ei, Asaji, Tatsuya, Kimura, Ryota, Iida, Daisuke, Najmi, Mohammed A., Ohkawa, Kazuhiro, Ishitani, Yoshihiro
Published in physica status solidi (b) (05.11.2024)
Published in physica status solidi (b) (05.11.2024)
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Journal Article
Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A 1 (LO) and E 2 (high) Phonons in a GaInN/GaN Heterostructure
Shwe, Thee Ei Khaing, Asaji, Tatsuya, Kimura, Ryota, Iida, Daisuke, Najmi, Mohammed A., Ohkawa, Kazuhiro, Ishitani, Yoshihiro
Published in physica status solidi (b) (27.04.2024)
Published in physica status solidi (b) (27.04.2024)
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Journal Article
Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface
Nakayama, Tomoya, Ito, Kotaro, Ma, Bei, Iida, Daisuke, Najmi, Mohammed A., Ohkawa, Kazuhiro, Ishitani, Yoshihiro
Published in Materials science in semiconductor processing (01.11.2022)
Published in Materials science in semiconductor processing (01.11.2022)
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