Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications
Ohtou, Tetsu, Nagumo, Toshiharu, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (2004)
Published in Japanese Journal of Applied Physics (2004)
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Journal Article
Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps
Nagumo, T, Takeuchi, K, Hase, T, Hayashi, Y
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
Temperature Dependence of Off-Current in Bulk and Fully Depleted SOI MOSFETs
Miyaji, Kousuke, Saitoh, Masumi, Nagumo, Toshiharu, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs
Khakifirooz, Ali, Kangguo Cheng, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Qing Liu, Levin, Theodore M., Edge, Lisa F., Hong He, Kuss, James, Allibert, Frederic, Bich-Yen Nguyen, Doris, Bruce, Shahidi, Ghavam
Published in IEEE electron device letters (01.11.2013)
Published in IEEE electron device letters (01.11.2013)
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Journal Article
Effects of drain bias on threshold voltage fluctuation and its impact on circuit characteristics
Miyamura, M., Nagumo, T., Takeuchi, K., Takeda, K., Hane, M.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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Conference Proceeding