Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier
Maeda, Shogo, Shinohara, Keito, Empizo, Melvin John F., Sarukura, Nobuhiko, Kuzuhara, Masaaki, Yamamoto, Akio, Asubar, Joel T., Kawabata, Shinsaku, Nagase, Itsuki, Baratov, Ali, Ishiguro, Masaki, Nezu, Toi, Igarashi, Takahiro, Sekiyama, Kishi, Terai, Suguru
Published in Journal of semiconductor technology and science (01.02.2024)
Published in Journal of semiconductor technology and science (01.02.2024)
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Journal Article
Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO 2 /AlGaN/GaN Structures
Nezu, Toi, Maeda, Shogo, Baratov, Ali, Terai, Suguru, Sekiyama, Kishi, Nagase, Itsuki, Kuzuhara, Masaaki, Yamamoto, Akio, Asubar, Joel T.
Published in Physica status solidi. A, Applications and materials science (01.04.2024)
Published in Physica status solidi. A, Applications and materials science (01.04.2024)
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Journal Article
Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer
Baratov, Ali, Kawabata, Shinsaku, Urano, Shun, Nagase, Itsuki, Ishiguro, Masaki, Maeda, Shogo, Igarashi, Takahiro, Nezu, Toi, Yatabe, Zenji, Matys, Maciej, Kachi, Tetsu, Adamowicz, Boguslawa, Wakejima, Akio, Kuzuhara, Masaaki, Yamamoto, Akio, Asubar, Joel T.
Published in Applied physics express (01.10.2022)
Published in Applied physics express (01.10.2022)
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Journal Article
GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Yatabe, Zenji
Published in Applied physics express (16.02.2021)
Published in Applied physics express (16.02.2021)
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Journal Article
Evidence of reduced interface states in Al 2 O 3 /AlGaN MIS structures via insertion of ex situ regrown AlGaN layer
Baratov, Ali, Kawabata, Shinsaku, Urano, Shun, Nagase, Itsuki, Ishiguro, Masaki, Maeda, Shogo, Igarashi, Takahiro, Nezu, Toi, Yatabe, Zenji, Matys, Maciej, Kachi, Tetsu, Adamowicz, Boguslawa, Wakejima, Akio, Kuzuhara, Masaaki, Yamamoto, Akio, Asubar, Joel T.
Published in Applied physics express (01.10.2022)
Published in Applied physics express (01.10.2022)
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Journal Article
GaN-based MIS-HEMTs with Al 2 O 3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Yatabe, Zenji
Published in Applied physics express (01.03.2021)
Published in Applied physics express (01.03.2021)
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Journal Article