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Year of Publication 16.10.2003
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Year of Publication 16.10.2003
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NON-VOLATILE STORAGE DEVICE
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Year of Publication 16.10.2003
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Year of Publication 16.10.2003
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Year of Publication 13.09.2002
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Year of Publication 13.09.2002
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A 126.6-mm(2) AND-type 512-Mb flash memory with 1.8-V power supply
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Published in IEEE journal of solid-state circuits (01.11.2001)
Published in IEEE journal of solid-state circuits (01.11.2001)
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NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
KANAMITSU, MICHITARO, SAEKI, SHUNICHI, KURATA, HIDEAKI, KUBONO, SHOUJI, YOSHIDA, KEIICHI, KOBAYASHI, TAKASHI, KAWAHARA, TAKAYUKI, KOBAYASHI, NAOKI, NOZOE, ATSUSHI, TAKASE, YOSHINORI
Year of Publication 19.09.2002
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Year of Publication 19.09.2002
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NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
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Year of Publication 18.07.2002
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Year of Publication 18.07.2002
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A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications
Nozoe, A., Kotani, H., Tsujikawa, T., Yoshida, K., Furusawa, K., Kato, M., Nishimoto, T., Kume, H., Kurata, H., Miyamoto, N., Kubono, S., Kanamitsu, M., Koda, K., Nakayama, T., Kouro, Y., Hosogane, A., Ajika, N., Koyashi, K.
Published in IEEE journal of solid-state circuits (01.11.1999)
Published in IEEE journal of solid-state circuits (01.11.1999)
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Journal Article
Detailed observation of small leak current in flash memories with thin tunnel oxides
Manabe, Y., Okuyama, K., Kubota, K., Nozoe, A., Karashima, T., Ujiie, K., Kanno, H., Nakashima, M., Ajika, N.
Published in IEEE transactions on semiconductor manufacturing (01.05.1999)
Published in IEEE transactions on semiconductor manufacturing (01.05.1999)
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