The 60° basal dislocation in wurtzite GaN: Energetics, electronic and core structures
Belabbas, I., Chen, J., Komninou, Ph, Nouet, G.
Published in Computational materials science (01.11.2013)
Published in Computational materials science (01.11.2013)
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Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study
Belabbas, I, Chen, J, Heggie, M I, Latham, C D, Rayson, M J, Briddon, P R, Nouet, G
Published in Modelling and simulation in materials science and engineering (01.10.2016)
Published in Modelling and simulation in materials science and engineering (01.10.2016)
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Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material
Kioseoglou, J., Kalesaki, E., Belabbas, I., Chen, J., Nouet, G., Kirmse, H., Neumann, W., Komninou, Ph, Karakostas, Th
Published in Journal of applied physics (01.09.2011)
Published in Journal of applied physics (01.09.2011)
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Atomic core configurations of the a ⇒ -screw basal dislocation in wurtzite GaN
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Conference Proceeding
Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures
Kioseoglou, J., Komninou, Ph, Chen, J., Nouet, G., Kalesaki, E., Karakostas, Th
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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First principles investigation of barium chalcogenide ternary alloys
Drablia, S., Meradji, H., Ghemid, S., Nouet, G., El Haj Hassan, F.
Published in Computational materials science (01.08.2009)
Published in Computational materials science (01.08.2009)
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Study of the properties of CuInSe2 materials prepared from nanoparticle powder
MEHDAOUI, S, BENSLIM, N, AISSAOUI, O, BENABDESLEM, M, BECHIRI, L, OTMANI, A, PORTIER, X, NOUET, G
Published in Materials characterization (01.05.2009)
Published in Materials characterization (01.05.2009)
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The atomic and electronic structure of dislocations in Ga-based nitride semiconductors
Belabbas, I., Ruterana, P., Chen, J., Nouet, G.
Published in Philosophical magazine (2003. Print) (21.05.2006)
Published in Philosophical magazine (2003. Print) (21.05.2006)
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Conference Proceeding
An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN
Aı̈choune, N, Potin, V, Ruterana, P, Hairie, A, Nouet, G, Paumier, E
Published in Computational materials science (01.06.2000)
Published in Computational materials science (01.06.2000)
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Conference Proceeding
Meta-GGA calculation of the electronic structure of group III-V nitrides
Litimein, F., Bouhafs, B., Nouet, G., Ruterana, P.
Published in Physica Status Solidi (b) (01.06.2006)
Published in Physica Status Solidi (b) (01.06.2006)
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Conference Proceeding
Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires
Kioseoglou, J., Kalesaki, E., Belabbas, I., Chen, J., Nouet, G., Komninou, Ph, Karakostas, Th
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer
Dimitrakopulos, G. P., Kehagias, Th, Ajagunna, A., Kioseoglou, J., Kerasiotis, I., Nouet, G., Vajpeyi, A. P., Komninou, Ph, Karakostas, Th
Published in Physica status solidi. A, Applications and materials science (01.05.2010)
Published in Physica status solidi. A, Applications and materials science (01.05.2010)
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Conference Proceeding