Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs
Saito, W., Noda, T., Kuraguchi, M., Takada, Y., Tsuda, K., Saito, Y., Omura, I., Yamaguchi, M.
Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
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Journal Article
Spontaneous emission enhancement in pillar-type microcavities
TEZUKA, T, NUNOUE, S.-Y, YOSHIDA, H, NODA, T
Published in Japanese Journal of Applied Physics (1993)
Published in Japanese Journal of Applied Physics (1993)
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Journal Article
Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs
Ohashi, Teruyuki, Kono, Hiroshi, Sano, Kenya, Noda, Takao
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs
Saito, Wataru, Kakiuchi, Yorito, Nitta, Tomohiro, Saito, Yasunobu, Noda, Takao, Fujimoto, Hidetoshi, Yoshioka, Akira, Ohno, Tetsuya, Yamaguchi, Masakazu
Published in IEEE electron device letters (01.07.2010)
Published in IEEE electron device letters (01.07.2010)
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Journal Article
Kinetic Analysis of Co-oxidation of Biomembrane Lipids Induced by Water-Soluble Radicals
Takahashi, Atsushi, Shibasaki-Kitakawa, Naomi, Noda, Takao, Sukegawa, Yuko, Kimura, Yuya, Yonemoto, Toshikuni
Published in Journal of the American Oil Chemists' Society (01.06.2016)
Published in Journal of the American Oil Chemists' Society (01.06.2016)
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Journal Article
Influence of V/III molar ratio on deep traps in metalorganic chemical vapor deposition grown InAlAs layers
NARITSUKA, S, NODA, T, WAGAI, A, FUJITA, S, ASHIZAWA, Y
Published in Japanese Journal of Applied Physics (01.07.1993)
Published in Japanese Journal of Applied Physics (01.07.1993)
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Journal Article
Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs
Saito, W, Nitta, T, Kakiuchi, Y, Saito, Y, Noda, T, Fujimoto, H, Yoshioka, A, Ohno, T
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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