High thermal stability of doped oxide semiconductor for monolithic 3D integration
Kawai, Hiroki, Kataoka, Junji, Saito, Nobuyoshi, Ueda, Tomomasa, Ishihara, Takamitsu, Ikeda, Keiji
Published in MRS bulletin (01.11.2021)
Published in MRS bulletin (01.11.2021)
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Journal Article
Origin of High Mobility in InSnZnO MOSFETs
Saito, Nobuyoshi, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in IEEE journal of the Electron Devices Society (2018)
Published in IEEE journal of the Electron Devices Society (2018)
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Journal Article
Tungsten/In-Sn-O stacked source/drain electrode structure of In-Ga-Zn-O thin-film transistor for low-contact resistance and suppressing channel shortening effect
Kataoka, Junji, Saito, Nobuyoshi, Ueda, Tomomasa, Tezuka, Tsutomu, Sawabe, Tomoaki, Ikeda, Keiji
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process
Saito, Nobuyoshi, Miura, Kentaro, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Fujiwara, Hirokazu, Sato, Yuta, Saito, Nobuyoshi, Ueda, Tomomasa, Ikeda, Keiji
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
High-Mobility and H 2 -Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process
Saito, Nobuyoshi, Miura, Kentaro, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in IEEE journal of the Electron Devices Society (2018)
Published in IEEE journal of the Electron Devices Society (2018)
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Journal Article
P202 Switching Back to Opioids Previously Associated with Opioid-induced Neurotoxicity
Tamba, Kaichiro, Takisawa, Yutaka, Saito, Nobuyoshi, Shimizu, Atsushi
Published in Journal of pain and symptom management (01.12.2016)
Published in Journal of pain and symptom management (01.12.2016)
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Journal Article
Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Fujiwara, Hirokazu, Sato, Yuta, Saito, Nobuyoshi, Ueda, Tomomasa, Ikeda, Keiji
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
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Conference Proceeding
High mobility (>30 cm 2 V −1 s −1 ) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μ m −1 off-state leakage current
Saito, Nobuyoshi, Sawabe, Tomoaki, Kataoka, Junji, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
High mobility (>30 cm2 V−1 s−1) and low source/drain parasitic resistance In-Zn-O BEOL transistor with ultralow <10−20 A m−1 off-state leakage current
Saito, Nobuyoshi, Sawabe, Tomoaki, Kataoka, Junji, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in Japanese Journal of Applied Physics (14.03.2019)
Published in Japanese Journal of Applied Physics (14.03.2019)
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Journal Article
Second case report of successful electroconvulsive therapy for a patient with schizophrenia and severe hemophilia A
Saito, Nobuyoshi, Shioda, Katsutoshi, Nisijima, Koichi, Kobayashi, Toshiyuki, Kato, Satoshi
Published in Neuropsychiatric disease and treatment (01.01.2014)
Published in Neuropsychiatric disease and treatment (01.01.2014)
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Journal Article
Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
Sato, Yuta, Fujiwara, Hirokazu, Saito, Nobuyoshi, Ueda, Tomomasa, Ikeda, Keiji
Published in 2021 20th International Workshop on Junction Technology (IWJT) (10.06.2021)
Published in 2021 20th International Workshop on Junction Technology (IWJT) (10.06.2021)
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Conference Proceeding