Silicon nitride film and nonvolatile semiconductor memory device
NISHITA TATSUO, NAKANISHI TOSHIO, HIROTA YOSHIHIRO, MIYAZAKI SEIICHI, KOHNO MASAYUKI
Year of Publication 03.02.2010
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Year of Publication 03.02.2010
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Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma processing apparatus
NISHITA, TATSUO, NAKANISHI, TOSHIO, HIROTA, YOSHIHIRO, KOHNO, MASAYUKI
Year of Publication 16.01.2009
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Year of Publication 16.01.2009
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Silicon nitride film and nonvolatile semiconductor memory device
NISHITA, TATSUO, NAKANISHI, TOSHIO, HIROTA, YOSHIHIRO, MIYAZAKI, SEIICHI, KOHNO, MASAYUKI
Year of Publication 16.01.2009
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Year of Publication 16.01.2009
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Method of fabricating insulating layer and method of fabricating semiconductor device
NISHITA TATSUO, NAKANISHI TOSHIO, FUJINO YUTAKA, ISHIZUKA SHUUICHI, NAKAYAMA TOMOE
Year of Publication 26.03.2008
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Year of Publication 26.03.2008
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Manufacturing method of gate insulating film and of semiconductor device
NISHITA, TATSUO, NAKANISHI, TOSHIO, NAKAYAMA, TOMOE, ISHIZUKA, SHUUICHI, FUJINO, YUTAKA
Year of Publication 16.01.2007
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Year of Publication 16.01.2007
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Method for forming gate insulating film, semiconductor device and computer recording medium
NISHITA, TATSUO, NAKANISHI, TOSHIO, ISHIZUKA, SHUUICHI, FUJINO, YUTAKA, SATO, YOSHIHIRO
Year of Publication 16.06.2006
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Year of Publication 16.06.2006
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MOS semiconductor memory device
NISHITA, TATSUO, NAKANISHI, TOSHIO, HIROTA, YOSHIHIRO, ENDOH, TETSUO, KOHNO, MASAYUKI, HONDA, MINORU
Year of Publication 16.02.2009
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Year of Publication 16.02.2009
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