Impact of a small change in growth temperature on the tail states of GaAsBi
Kakuyama, Kyohei, Hasegawa, Sho, Nishinaka, Hiroyuki, Yoshimoto, Masahiro
Published in Journal of applied physics (28.07.2019)
Published in Journal of applied physics (28.07.2019)
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Journal Article
Bismuth induced enhancement of Rashba spin–orbit interaction in GaAsBi/GaAs heterostructures
Kunihashi, Yoji, Shinohara, Yasushi, Hasegawa, Sho, Nishinaka, Hiroyuki, Yoshimoto, Masahiro, Oguri, Katsuya, Gotoh, Hideki, Kohda, Makoto, Nitta, Junsaku, Sanada, Haruki
Published in Applied physics letters (01.05.2023)
Published in Applied physics letters (01.05.2023)
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Journal Article
Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence
Hasegawa, Sho, Hasuike, Noriyuki, Kanegae, Kazutaka, Nishinaka, Hiroyuki, Yoshimoto, Masahiro
Published in Materials science in semiconductor processing (01.08.2023)
Published in Materials science in semiconductor processing (01.08.2023)
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Journal Article
Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode
Hasegawa, Sho, Hasuike, Noriyuki, Kanegae, Kazutaka, Nishinaka, Hiroyuki, Yoshimoto, Masahiro
Published in Japanese Journal of Applied Physics (01.01.2023)
Published in Japanese Journal of Applied Physics (01.01.2023)
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Journal Article
Mist-CVD-derived Hf0.55Zr0.45O2 ferroelectric thin films post-annealed by rapid thermal annealing
Tanaka, Sho, Fujiwara, Yuki, Nishinaka, Hiroyuki, Yoshimoto, Masahiro, Noda, Minoru
Published in AIP advances (01.01.2023)
Published in AIP advances (01.01.2023)
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Journal Article
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
Fregolent, Manuel, Buffolo, Matteo, De Santi, Carlo, Hasegawa, Sho, Matsumura, Junta, Nishinaka, Hiroyuki, Yoshimoto, Masahiro, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Journal of physics. D, Applied physics (26.08.2021)
Published in Journal of physics. D, Applied physics (26.08.2021)
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Journal Article
Single-Domain and Atomically Flat Surface of κ‑Ga2O3 Thin Films on FZ-Grown ε‑GaFeO3 Substrates via Step-Flow Growth Mode
Nishinaka, Hiroyuki, Ueda, Osamu, Tahara, Daisuke, Ito, Yusuke, Ikenaga, Noriaki, Hasuike, Noriyuki, Yoshimoto, Masahiro
Published in ACS omega (17.11.2020)
Published in ACS omega (17.11.2020)
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Journal Article
Solution-based mist CVD technique for CH3NH3Pb(Br1−xClx)3 inorganic-organic perovskites
Nishinaka, Hiroyuki, Yoshimoto, Masahiro
Published in Japanese Journal of Applied Physics (01.10.2016)
Published in Japanese Journal of Applied Physics (01.10.2016)
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Journal Article
Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate
Nishinaka, Hiroyuki, Ueda, Osamu, Ikenaga, Noriaki, Hasuike, Noriyuki, Yoshimoto, Masahiro
Published in Materials letters. X (01.06.2022)
Published in Materials letters. X (01.06.2022)
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Journal Article
Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n+-Si(100) substrates
Tahara, Daisuke, Nishinaka, Hiroyuki, Sato, Shota, Li, Liu, Kawaharamura, Toshiyuki, Yoshimoto, Masahiro, Noda, Minoru
Published in Japanese Journal of Applied Physics (01.11.2019)
Published in Japanese Journal of Applied Physics (01.11.2019)
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