Search Results - "NISHIGUCHI TARO" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

by Uchida, Kosuke, Yamamoto, Hirofumi, Nishiguchi, Taro, Hiyoshi, Toru, Furumai, Masaki, Mikamura, Yasuki, Matsukawa, Shinji
Published in Materials Science Forum (24.05.2016)

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Journal Article

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

by NISHIGUCHI, Taro
Year of Publication 12.01.2023

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE

by NISHIGUCHI, Taro
Year of Publication 06.01.2022

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Patent

Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping

Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping

by Hoshino, Norihiro, Tajima, Michio, Nishiguchi, Taro, Ikeda, Keiichi, Hayashi, Toshihiko, Kinoshita, Hiroyuki, Shiomi, Hiromu
Published in Japanese Journal of Applied Physics (01.10.2007)

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Journal Article

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE

by MIYASE, Takaya, NISHIGUCHI, Taro
Year of Publication 27.01.2022

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE, AND PRODUCTION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE, AND PRODUCTION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

by HIRATSUKA KENJI, NISHIGUCHI TARO
Year of Publication 04.03.2021

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Patent

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

by NISHIGUCHI TARO
Year of Publication 05.10.2017

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Patent

METHOD OF MANUFACTURING SEMICONDUCTOR LAMINATE

METHOD OF MANUFACTURING SEMICONDUCTOR LAMINATE

by NISHIGUCHI TARO
Year of Publication 13.04.2017

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Patent

Thermal Etching of 6H–SiC Substrate Surface

Thermal Etching of 6H–SiC Substrate Surface

by Nishiguchi, Taro, Ohshima, Satoru, Nishino, Shigehiro
Published in Japanese Journal of Applied Physics (2003)

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Journal Article

MANUFACTURING APPARATUS OF SILICON CARBIDE SINGLE CRYSTAL

MANUFACTURING APPARATUS OF SILICON CARBIDE SINGLE CRYSTAL

by SASAKI SUSUMU, NISHIGUCHI TARO
Year of Publication 20.02.2020

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Patent

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE EPITAXIAL SUBSTRATE

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE EPITAXIAL SUBSTRATE

by NISHIGUCHI TARO
Year of Publication 16.07.2015

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE

by NISHIHARA, Hiroki, MIYASE, Takaya, NISHIGUCHI, Taro
Year of Publication 17.03.2022

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Patent

Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates

Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates

by Nishiguchi, Taro, Masuda, Yasuichi, Ohshima, Satoru, Nishino, Shigehiro
Published in Japanese Journal of Applied Physics (2004)

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Journal Article

SILICON CARBIDE EPITAXIAL SUBSTRATE, MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE, MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE

by NISHIGUCHI TARO, WADA KEIJI, HIYOSHI TORU
Year of Publication 14.10.2021

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

by NISHIGUCHI, Taro, ITOH, Hironori, SAKURADA, Takashi
Year of Publication 05.08.2021

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE

by NISHIGUCHI TARO, WADA KEIJI, GENBAN JUN
Year of Publication 13.05.2021

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Patent

SEMICONDUCTOR LAMINATE BODY

SEMICONDUCTOR LAMINATE BODY

by YAMAMOTO YASUSHI, NISHIGUCHI TARO, SAITO TAKESHI
Year of Publication 08.04.2021

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Patent

METHOD OF MANUFACTURING HEXAGONAL CRYSTAL COMPOUND SEMICONDUCTOR

METHOD OF MANUFACTURING HEXAGONAL CRYSTAL COMPOUND SEMICONDUCTOR

by NISHIGUCHI TARO, KAWASE TOMOHIRO, FUKUZAWA TOSHIYUKI
Year of Publication 14.01.2021

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE

by NISHIGUCHI, Taro, HORI, Tsutomu, ENOKIZONO, Taro
Year of Publication 24.12.2020

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Patent

SILICON CARBIDE EXPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EXPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

by HIRATSUKA, Kenji, NISHIGUCHI, Taro
Year of Publication 13.04.2017

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Patent

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