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geração de um estado não-reversível em uma célula de bit que possui uma primeira junção de túnel magnética e uma segunda junção de túnel magnética
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Mobile communication device having integrated embedded flash and sram memory
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Mobile communication device having integrated embedded flash and SRAM memory
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Mobile communication device having integrated embedded flash and SRAM memory
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Mobile communication device having integrated embedded flash and sram memory
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GENERATING A NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JUNCTION AND A SECOND MAGNETIC TUNNEL JUNCTION
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Year of Publication 28.08.2019
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Generación de un estado no reversible en una célula de bits que tiene una primera unión de túnel magnética y una segunda unión de túnel magnética
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Year of Publication 02.07.2019
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