Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates
Pan, Lei, Dong, Xun, Li, Zhonghui, Luo, Weike, Ni, Jinyu
Published in Applied surface science (31.07.2018)
Published in Applied surface science (31.07.2018)
Get full text
Journal Article
The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
Zhang, JinFeng, Hao, Yue, Zhang, JinCheng, Ni, JinYu
Published in Science China. Information sciences (01.06.2008)
Published in Science China. Information sciences (01.06.2008)
Get full text
Journal Article
Effect of reactor pressure on the growth rate and structural properties of GaN films
Ni, JinYu, Hao, Yue, Zhang, JinCheng, Yang, LinAn
Published in Chinese science bulletin (01.08.2009)
Published in Chinese science bulletin (01.08.2009)
Get full text
Journal Article
Surmounting Alkoxide Trap Strategy: N‑Heterocyclic Carbene Chromium(0)-Catalyzed C‑Alkylation between Alcohols
Su, Peifeng, Chen, Zhe, Ni, Jinyu, Yang, Zhenjie, Li, Yinwu, Ke, Zhuofeng
Published in ACS catalysis (06.10.2023)
Published in ACS catalysis (06.10.2023)
Get full text
Journal Article
Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer
Li, Chuanhao, Li, Zhonghui, Peng, Daqing, Ni, Jinyu, Pan, Lei, Zhang, Dongguo, Dong, Xun, Kong, Yuechan
Published in Semiconductor science and technology (01.03.2015)
Published in Semiconductor science and technology (01.03.2015)
Get full text
Journal Article
Monolithically integrated E/D mode MIS GaN HEMTs and inverters on Si substrate
Cen Kong, Jianjun Zhou, Yuechan Kong, Jinyu Ni, Tangsheng Chen
Published in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (01.06.2014)
Published in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (01.06.2014)
Get full text
Conference Proceeding
An Indirect Prescribed Performance Design Framework for Nonlinear Multi-Agent Systems under Switching Graphs
Ni, Jinyu, Huang, Xiucai
Published in 2024 36th Chinese Control and Decision Conference (CCDC) (25.05.2024)
Published in 2024 36th Chinese Control and Decision Conference (CCDC) (25.05.2024)
Get full text
Conference Proceeding
Influence of SiH4 treatment time on the properties of GaN films grown on in-situ SiNx patterned sapphire substrate
Daqing Peng, Zhonghui Li, Dongguo Zhang, Chuanhao Li, Liang Li, Xun Dong, Jinyu Ni, Lei Pan, Weike Luo
Published in 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (01.10.2014)
Published in 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (01.10.2014)
Get full text
Conference Proceeding
Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition
Yue, YuanZheng, Hao, Yue, Feng, Qian, Zhang, JinCheng, Ma, XiaoHua, Ni, JinYu
Published in Science in China Series E: Technological Sciences (01.09.2009)
Published in Science in China Series E: Technological Sciences (01.09.2009)
Get full text
Journal Article
Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT
Hao, Yue, Wang, Chong, Ni, JinYu, Feng, Qian, Zhang, JinCheng, Mao, Wei
Published in Science in China Series E: Technological Sciences (01.06.2008)
Published in Science in China Series E: Technological Sciences (01.06.2008)
Get full text
Journal Article
Robust Adaptive Tracking Control for Uncertain UGV with Controllability Relaxation
Yang, Xiangcong, Ni, Jinyu, Huang, Xiucai, Yang, Junrong
Published in 2023 35th Chinese Control and Decision Conference (CCDC) (20.05.2023)
Published in 2023 35th Chinese Control and Decision Conference (CCDC) (20.05.2023)
Get full text
Conference Proceeding
Robust Adaptive Attitude Trajectory Tracking Control for Quadrotor UAVs based on Relaxed Controllability Condition
Ni, Jinyu, Zhang, Zhongyu, Wang, Xiao, Huang, Xiucai
Published in 2022 17th International Conference on Control, Automation, Robotics and Vision (ICARCV) (11.12.2022)
Published in 2022 17th International Conference on Control, Automation, Robotics and Vision (ICARCV) (11.12.2022)
Get full text
Conference Proceeding
AlGaN/GaN MOS-HEMT With [Formula Omitted] Dielectric and [Formula Omitted] Interfacial Passivation Layer Grown by Atomic Layer Deposition
Yue, Yuanzheng, Hao, Yue, Zhang, Jincheng, Ni, Jinyu, Mao, Wei, Feng, Qian, Liu, Linjie
Published in IEEE electron device letters (01.08.2008)
Published in IEEE electron device letters (01.08.2008)
Get full text
Journal Article