Effects of stacking method and strain on the electronic properties of the few-layer group-IVA monochalcogenide heterojunctionsElectronic supplementary information (ESI) available: Details of optimized crystal structure and band structures of the few-layer heterojunctions, the band gaps variations of the trilayer and four-layer heterojunctions with biaxial strain, the lattice constants, average bond length, and band gap of the monolayers, trilayer and four-layer heterojunctions of group-IVA monoc
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Year of Publication 23.08.2018
Year of Publication 23.08.2018
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