Al2O3 INSULATED-GATE STRUCTURE FOR AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS HAVING THIN AlGaN BARRIER LAYERS
Hashizume, T, Anantathanasarn, S, Negoro, N, Sano, E, Hasegawa, H, Kumakura, K
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 6B, pp. L777-L779. 2004 (15.06.2004)
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 6B, pp. L777-L779. 2004 (15.06.2004)
Get full text
Journal Article
A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection
Ujita, Shinji, Kawai, Yasufumi, Kaibara, Kazuhiro, Negoro, Noboru, Fukuda, Takeshi, Sakai, Hiroyuki, Ueda, Tetsuzo, Tanaka, Tsuyoshi
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
Get full text
Journal Article
Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (0 0 1)-c(4×4) surfaces
Get full text
Journal Article
Conference Proceeding
POWER SUPPLY DEVICE AND SOLID ELECTROLYTIC CAPACITOR
KOIE Syusaku, NEGORO Noboru, KURANUKI Kenji, TAKAHASHI Koji, HANDA Hiroyuki
Year of Publication 19.09.2024
Get full text
Year of Publication 19.09.2024
Patent
SOLID ELECTROLYTIC CAPACITOR
KOIE Syusaku, NEGORO Noboru, KURANUKI Kenji, TAKAHASHI Koji, HANDA Hiroyuki
Year of Publication 02.08.2024
Get full text
Year of Publication 02.08.2024
Patent
SOLID ELECTROLYTIC CAPACITOR AND METHOD FOR MANUFACTURING SOLID ELECTROLYTIC CAPACITOR
KOIE Syusaku, NEGORO Noboru, KURANUKI Kenji, TAKAHASHI Koji, HANDA Hiroyuki
Year of Publication 02.08.2024
Get full text
Year of Publication 02.08.2024
Patent
A high-efficient driving isolated Drive-by-Microwave half-bridge gate driver for a GaN inverter
Nagai, Shuichi, Kawai, Yasufumi, Tabata, Osamu, Choe, Songbaek, Negoro, Noboru, Ueda, Tetsuzo
Published in 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2016)
Published in 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2016)
Get full text
Conference Proceeding
SWITCHING CONTROL CIRCUIT AND GATE DRIVING CIRCUIT
YANAGIHARA, Manabu, AZUMA, Takeshi, OTSU, Satoshi, NEGORO, Noboru, MINAMI, Yoshihisa
Year of Publication 01.09.2022
Get full text
Year of Publication 01.09.2022
Patent
Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth
Nakazawa, Satoshi, Shiozaki, Nanako, Negoro, Noboru, Tsurumi, Naohiro, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo
Published in Japanese Journal of Applied Physics (01.09.2017)
Published in Japanese Journal of Applied Physics (01.09.2017)
Get full text
Journal Article
GATE DRIVE CIRCUIT, INSULATED GATE DRIVER, AND GATE DRIVE METHOD
CHOE, Songbaek, TABATA, Osamu, NEGORO, Noboru, NAGATOMI, Yuta, ENOMOTO, Shingo
Year of Publication 17.06.2021
Get full text
Year of Publication 17.06.2021
Patent
INSULATED TRANSMISSION DEVICE
CHOE, Songbaek, TABATA, Osamu, NEGORO, Noboru, NAGATOMI, Yuta, ENOMOTO, Shingo
Year of Publication 29.04.2021
Get full text
Year of Publication 29.04.2021
Patent
A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer
Nishijima, Masaaki, Murata, Tomohiro, Hirose, Yutaka, Hikita, Masahiro, Negoro, Noboru, Sakai, Hiroyuki, Uemoto, Yasuhiro, Inoue, Kaoru, Tanaka, Tsuyoshi, Ueda, Daisuke
Published in IEEE MTT-S International Microwave Symposium Digest, 2005 (01.01.2005)
Published in IEEE MTT-S International Microwave Symposium Digest, 2005 (01.01.2005)
Get full text
Conference Proceeding