Defect behavior during growth of heavily phosphorus doped Czochralski silicon crystals (II): Theoretical study
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Published in Journal of applied physics (07.08.2024)
Published in Journal of applied physics (07.08.2024)
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Journal Article
Defect behavior during growth of heavily phosphorus-doped Czochralski silicon crystals. I. Experimental study
Hourai, Masataka, Narushima, Yasuhito, Torigoe, Kazuhisa, Nonaka, Naoya, Koga, Koutaro, Ono, Toshiaki, Horie, Hiroshi, Sueoka, Koji
Published in Journal of applied physics (07.08.2024)
Published in Journal of applied physics (07.08.2024)
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Journal Article
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Year of Publication 11.05.2023
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Year of Publication 29.11.2019
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n형 실리콘 단결정의 제조 방법, n형 실리콘 단결정의 잉곳, 실리콘 웨이퍼 및, 에피택셜 실리콘 웨이퍼
MAEGAWA KOICHI, OGAWA FUKUO, NARUSHIMA YASUHITO, KIHARA AYUMI, KAWAKAMI YASUFUMI
Year of Publication 08.11.2019
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Year of Publication 08.11.2019
Patent