Effects of Threshold Voltage Variations on Single-Event Upset Response of Sequential Circuits at Advanced Technology Nodes
Hangfang Zhang, Hui Jiang, Assis, Thiago R., Mahatme, Nihaar N., Narasimham, Balaji, Massengill, Lloyd W., Bhuva, Bharat L., Shi-Jie Wen, Wong, Richard
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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Journal Article
Scaling trends and bias dependence of the soft error rate of 16 nm and 7 nm FinFET SRAMs
Narasimham, Balaji, Gupta, Saket, Reed, Dan, Wang, J. K., Hendrickson, Nick, Taufique, Hasan
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
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Conference Proceeding
Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits
Chen, R. M., Diggins, Z. J., Mahatme, N. N., Wang, L., Zhang, E. X., Chen, Y. P., Zhang, H., Liu, Y. N., Narasimham, B., Witulski, A. F., Bhuva, B. L., Fleetwood, D. M.
Published in IEEE transactions on nuclear science (01.08.2017)
Published in IEEE transactions on nuclear science (01.08.2017)
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Journal Article
Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies
Narasimham, B., Bhuva, B.L., Schrimpf, R.D., Massengill, L.W., Gadlage, M.J., Amusan, O.A., Holman, W.T., Witulski, A.F., Robinson, W.H., Black, J.D., Benedetto, J.M., Eaton, P.H.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
Single-Event Charge Collection and Upset in 40-nm Dual- and Triple-Well Bulk CMOS SRAMs
Chatterjee, I., Narasimham, B., Mahatme, N. N., Bhuva, B. L., Schrimpf, R. D., Wang, J. K., Bartz, B., Pitta, E., Buer, M.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes
Narasimham, B., Bhuva, B.L., Schrimpf, R.D., Massengill, L.W., Gadlage, M.J., Holman, T.W., Witulski, A.F., Robinson, W.H., Black, J.D., Benedetto, J.M., Eaton, P.H.
Published in IEEE transactions on nuclear science (01.06.2008)
Published in IEEE transactions on nuclear science (01.06.2008)
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Journal Article
Bias dependence of muon-induced single event upsets in 28 nm static random access memories
Sierawski, Brian D., Bhuva, Bharat, Reed, Robert, Ishida, Katsuhiko, Tam, Nelson, Hillier, Adrian, Narasimham, Balaji, Trinczek, Michael, Blackmore, Ewart, Shi-Jie Wen, Wong, Richard
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs
Narasimham, Balaji, Wang, Jung K., Vedula, Narayana, Gupta, Saket, Bartz, Brandon, Monzel, Carl, Chatterjee, Indranil, Bhuva, Bharat L., Schrimpf, Ronald D., Reed, Robert A.
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
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Conference Proceeding
Generation and Propagation of Single Event Transients in 0.18- \mu Fully Depleted SOI
Gouker, P., Brandt, J., Wyatt, P., Tyrrell, B., Soares, A., Knecht, J., Keast, C., McMorrow, D., Narasimham, B., Gadlage, M., Bhuva, B.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
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Journal Article
Single-Event Upset Cross-Section Trends for D-FFs at the 5- and 7-nm Bulk FinFET Technology Nodes
Xiong, Yoni, Pieper, Nicholas J., Feeley, Alexandra T., Narasimham, Balaji, Ball, Dennis R., Bhuva, Bharat L.
Published in IEEE transactions on nuclear science (01.04.2023)
Published in IEEE transactions on nuclear science (01.04.2023)
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Journal Article
Neutron and alpha particle-induced transients in 90 nm technology
Narasimham, B., Gadlage, M.J., Bhuva, B.L., Schrimpf, R.D., Massengill, L.W., Holman, W.T., Witulski, A.F., Xiaowei Zhu, Balasubramanian, A., Wender, S.A.
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
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Conference Proceeding
Single-Event Upset Cross Section at High Frequencies for RHBD Flip-Flop Designs at the 5-nm Bulk FinFET Node
Xiong, Yoni, Pieper, Nicholas J., Qian, Ying, Wodzro, Stuart E., Narasimham, Balaji, Fung, Rita, Wen, Shi-Jie, Bhuva, Bharat L.
Published in IEEE transactions on nuclear science (01.04.2024)
Published in IEEE transactions on nuclear science (01.04.2024)
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Journal Article
Single-Event Upsets in a 7-nm Bulk FinFET Technology With Analysis of Threshold Voltage Dependence
D'Amico, Joseph V., Ball, Dennis R., Cao, Jingchen, Xu, Lyuan, Rathore, Mike, Wen, Shi-Jie, Fung, Rita, Narasimham, Balaji, Kauppila, Jeffrey S., Massengill, Lloyd W., Bhuva, Bharat L.
Published in IEEE transactions on nuclear science (01.05.2021)
Published in IEEE transactions on nuclear science (01.05.2021)
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Journal Article
Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology
Hangfang Zhang, Hui Jiang, Assis, Thiago R., Ball, Dennis R., Narasimham, Balaji, Anvar, Ali, Massengill, Lloyd W., Bhuva, Bharat L.
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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Journal Article
Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops
Narasimham, Balaji, Hatami, Safar, Anvar, Ali, Harris, David M., Lin, Alvin, Wang, Jung K., Chatterjee, Indranil, Ni, Kai, Bhuva, Bharat L., Schrimpf, Ronald D., Reed, Robert A., McCurdy, Mike W.
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits
Ahlbin, J.R., Massengill, L.W., Bhuva, B.L., Narasimham, B., Gadlage, M.J., Eaton, P.H.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article