Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors
Nanjo, Takuma, Imai, Akifumi, Kurahashi, Kenichiro, Matsuda, Takashi, Suita, Muneyoshi, Yagyu, Eiji
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
First Operation of AlGaN Channel High Electron Mobility Transistors
Nanjo, Takuma, Takeuchi, Misaichi, Suita, Muneyoshi, Abe, Yuji, Oishi, Toshiyuki, Tokuda, Yasunori, Aoyagi, Yoshinobu
Published in Applied physics express (01.01.2008)
Published in Applied physics express (01.01.2008)
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Journal Article
Ion implantation doping for AlGaN/GaN HEMTs
Suita, Muneyoshi, Nanjo, Takuma, Oishi, Toshiyuki, Abe, Yuji, Tokuda, Yasunori
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article
Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV
Hayashida, Tetsuro, Nanjo, Takuma, Furukawa, Akihiko, Yamamuka, Mikio
Published in Applied physics express (01.06.2017)
Published in Applied physics express (01.06.2017)
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Journal Article
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
Nanjo, Takuma, Miura, Naruhisa, Oishi, Toshiyuki, Suita, Muneyoshi, Abe, Yuji, Ozeki, Tatsuo, Nakatsuka, Shigenori, Inoue, Akira, Ishikawa, Takahide, Matsuda, Yoshio, Ishikawa, Hiroyasu, Egawa, Takashi
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
Nanjo, Takuma, Kawase, Kazumasa, Suita, Muneyoshi, Abe, Yuji, Oishi, Toshiyuki, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (01.06.2007)
Published in Japanese Journal of Applied Physics (01.06.2007)
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Journal Article
Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer
Nanjo, Takuma, Imazawa, Takashi, Kiyoi, Akira, Hayashida, Tetsuro, Watahiki, Tatsuro, Miura, Naruhisa
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
AlGaN Channel HEMT With Extremely High Breakdown Voltage
Nanjo, T., Imai, A., Suzuki, Y., Abe, Y., Oishi, T., Suita, M., Yagyu, E., Tokuda, Y.
Published in IEEE transactions on electron devices (01.03.2013)
Published in IEEE transactions on electron devices (01.03.2013)
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Journal Article
Investigation of post-annealing effects for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors with thin AlN barrier layer
Nanjo, Takuma, Koyama, Hidetoshi, Imai, Akifumi, Watahiki, Tatsuro, Yamamuka, Mikio
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article