Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT
Choi, Uiho, Lee, Kyeongjae, Kwak, Taemyung, Jung, Donghyeop, Jang, Taehoon, Nam, Yongjun, So, Byeongchan, Kim, Hyun-Seop, Cha, Ho-Young, Kang, Myoung-Jin, Seo, Kwang-Seok, Nam, Okhyun
Published in Japanese Journal of Applied Physics (01.12.2019)
Published in Japanese Journal of Applied Physics (01.12.2019)
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Journal Article
The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor
Choi, Uiho, Jung, Donghyeop, Lee, Kyeongjae, Kwak, Taemyung, Jang, Taehoon, Nam, Yongjun, So, Byeongchan, Nam, Okhyun
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition
Choi, Uiho, Lee, Kyeongjae, Han, Jaeyeon, Jang, Taehoon, Nam, Yongjun, So, Byeongchan, Kwak, Taemyung, Nam, Okhyun
Published in Thin solid films (01.04.2019)
Published in Thin solid films (01.04.2019)
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Journal Article
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
KIM DONGWOO, KIM HYOJIN, LEE SANGMOON, KIM JINBUM, HWANG INGEON, NAM YONGJUN
Year of Publication 23.01.2024
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Year of Publication 23.01.2024
Patent
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire
Choi, Uiho, Kim, Hyun-Seop, Lee, Kyeongjae, Jung, Donghyeop, Kwak, Taemyung, Jang, Taehoon, Nam, Yongjun, So, Byeongchan, Kang, Myoung-Jin, Seo, Kwang-Seok, Han, Min, Choi, Seokgyu, Lee, Sangmin, Cha, Ho-Young, Nam, Okhyun
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
INTEGRATED CIRCUIT DEVICE
Kim, Hyojin, Lee, Taehyung, Kim, Jinbum, Lee, Sangmoon, Hwang, Ingeon, Nam, Yongjun
Year of Publication 26.09.2024
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Year of Publication 26.09.2024
Patent
INTEGRATED CIRCUIT DEVICE
Jang, Ingyu, Kim, Hyojin, Kim, Jinbum, Kim, Gyeom, Lee, Sangmoon, Jung, Sujin, Nam, Yongjun
Year of Publication 26.09.2024
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Year of Publication 26.09.2024
Patent
INTEGRATED CIRCUIT DEVICE
NAM, Yongjun, KIM, Hyojin, LEE, Taehyung, KIM, Jinbum, LEE, Sangmoon, HWANG, Ingeon
Year of Publication 25.09.2024
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Year of Publication 25.09.2024
Patent
SEMICONDUCTOR DEVICE
Kim, Hyojin, Kim, Jinbum, Lee, Sangmoon, Kim, Dongwoo, Kim, Sungmin, Hwang, Ingeon, Nam, Yongjun
Year of Publication 23.05.2024
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Year of Publication 23.05.2024
Patent
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
NAM, Yongjun, KIM, Hyojin, KIM, Jinbum, LEE, Sangmoon, KIM, Dongwoo, HWANG, Ingeon
Year of Publication 18.01.2024
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Year of Publication 18.01.2024
Patent
SEMICONDUCTOR DEVICE
JANG, INGYU, KIM, JINBUM, KIM, DONGWOO, LEE, SANGMOON, NAM, YONGJUN, JUNG, SUJIN, KIM, DAHYE, KIM, DONGMYOUNG
Year of Publication 03.11.2022
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Year of Publication 03.11.2022
Patent