High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion
Wen, Xinyi, Lee, Kwang Jae, Nakazato, Yusuke, Chun, Jaeyi, Chowdhury, Srabanti
Published in Crystals (Basel) (01.04.2023)
Published in Crystals (Basel) (01.04.2023)
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Journal Article
10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility
Wen, Xinyi, Shankar, Bhawani, Lee, Kwangjae, Kasai, Hayao, Noshin, Maliha, Chun, Jaeyi, Nakazato, Yusuke, Chowdhury, Srabanti
Published in IEEE electron device letters (01.04.2024)
Published in IEEE electron device letters (01.04.2024)
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Atropodiastereoselective 5N‑Acylation of 1,5-Benzodiazepin-2-ones with (S)‑2-Phenylpropanoyl and (S)‑2-Phenylbutanoyl Chlorides
Funaki, Kaoru, Tabata, Hidetsugu, Nakazato, Yusuke, Takahashi, Yuka, Tasaka, Tomohiko, Takahashi, Hideyo, Natsugari, Hideaki, Oshitari, Tetsuta
Published in Journal of organic chemistry (18.11.2022)
Published in Journal of organic chemistry (18.11.2022)
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Journal Article
Atropodiastereoselective 5 N -Acylation of 1,5-Benzodiazepin-2-ones with ( S )-2-Phenylpropanoyl and ( S )-2-Phenylbutanoyl Chlorides
Funaki, Kaoru, Tabata, Hidetsugu, Nakazato, Yusuke, Takahashi, Yuka, Tasaka, Tomohiko, Takahashi, Hideyo, Natsugari, Hideaki, Oshitari, Tetsuta
Published in Journal of organic chemistry (18.11.2022)
Published in Journal of organic chemistry (18.11.2022)
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Journal Article
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE
SAWADA, Tatsuro, HIRAYAMA, Tomohisa, KOMATSU, Naoyoshi, NAKAZATO, Yusuke, AZUMA, Katsunori
Year of Publication 08.04.2021
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Year of Publication 08.04.2021
Patent
Nanoporous GaN onp-type GaN: a Mg out-diffusion compensation layer for heavily Mg-dopedp-type GaN
Lee, Kwang Jae, Nakazato, Yusuke, Chun, Jaeyi, Wen, Xinyi, Meng, Chuanzhe, Soman, Rohith, Noshin, Maliha, Chowdhury, Srabanti
Published in Nanotechnology (04.10.2022)
Published in Nanotechnology (04.10.2022)
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